Allicdata Part #: | BZT52C10-GRHG-ND |
Manufacturer Part#: |
BZT52C10-G RHG |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 10V 350MW SOD123 |
More Detail: | Zener Diode 10V 350mW ±5% Surface Mount SOD-123 |
DataSheet: | BZT52C10-G RHG Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02298 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 350mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 7V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
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RHG Application Field and Working Principle of BZT52C10-G
Diodes are among the most common semiconductor components. Due to their small size, they are used in a wide range of applications, from basic logic and small-signal applications to high-power applications. Zener diodes are a special type of diode designed to allow electrical current to operate in a reverse-biased direction approximately. Used to regulate voltage. Most Zener diodes are designed to work in a single direction but certain materials provide them with the ability to work in both directions. The BZT52C10-G is an example of a single Zener diode. It is widely used in a wide range of applications.
The BZT52C10-G is a single Zener diode that is widely used in a range of applications such as voltage regulation, voltage stabilization, ESD protection, and transient voltage halogenation. It is designed to operate in a reverse-biased direction approximately, using the Zener principle to regulate the voltage. It is commonly used in such applications as AC/DC power supplies, battery chargers, signal filters, and automotive electronics.
The BZT52C10-G is a small signal diodes with dimensions of 3.2mm x 1.6mm x 0.9mm, making them easy to integrate into a variety of circuits. The operating temperature range of the BZT52C10-G is -65°C to 175°C, providing a wide temperature range for reliable operation. The breakdown voltage of this Zener diode ranges from 5.2V to 12V for 4% tolerance parts.
When the BZT52C10-G is subjected to a reverse-biased direction, it produces a small value of zener voltage, typically 5.2V to 12V depending on the type of material. The zener breakdown voltage allows current to be regulated independent of the applied voltage, making it ideal for ESD protection, transient voltage halogenation, and voltage regulation applications. The Zener voltage also makes it easy to match other components in the circuit.
The BZT52C10-G is composed of the same silicon material and structure used in other Zener diodes, and is designed to take advantage of the Zener breakdown voltage level. It has a high capacity for holding current and is capable of handling power levels over hundreds of watts, making it suitable for high-power and high-voltage applications. It has a maximum peak forward current of 1.5A and a maximum reverse leakage current of 1.0µA.
The BZT52C10-G is a versatile and useful component that can be used in a variety of applications. Its wide operating temperature range, low power consumption, and high current holding capacity make it suitable for a wide range of small signal, power regulation, and high-power applications. The Zener voltage allows for voltage regulation independent of the applied voltage, making it ideal for ESD protection and other applications.
The specific data is subject to PDF, and the above content is for reference
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