BZT55C5V6 L0G Allicdata Electronics
Allicdata Part #:

BZT55C5V6L0G-ND

Manufacturer Part#:

BZT55C5V6 L0G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 5.6V 500MW MINI MELF
More Detail: Zener Diode 5.6V 500mW ±5% Surface Mount Mini MELF
DataSheet: BZT55C5V6 L0G datasheetBZT55C5V6 L0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01548
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.6V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

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Today we will be looking at the BZT55C5V6 L0G—a Zener diode—and what areas it serves in, along with its working principle.

What is a Zener Diode?

For better understanding, we must first look into what a Zener diode is. In most cases, a diode is used to direct current in one way with its PN junction, meaning that any current that tries to go the opposite way is blocked. Zener diodes, however, reverse the current and can control it. Zener diodes are designed to have an established breakdown voltage—the voltage at which the diode switches on or off—that remains relatively fixed despite changes in current. This behaviour is extremely useful for its many applications.

BZT55C5V6-L0G

The BZT55C5V6-L0G is a particular type of diode that contains a breakdown voltage of 5.6 Volts. As a component, it is SMA-qualified, meaning it is small and compact and can easily be incorporated into a circuit.

Application Fields

The BZT55C5V6-L0G is most often used in digital and TTL circuits. Digital circuits rely on the binary 0 and 1. The duality of the Zener diode means that it can be used to control whether the digital output is switched on (1) or off (0) easily. This means that it is an ideal component to use in digital and TTL circuits, where it can quickly switch between the two settings.

The diode can also be used for regulating a voltage. Rather than having a constantly varying voltage, the diode can be used to control a voltage line and force it to stay close to the BZT55C5V6-LO’s breakdown voltage, meaning that no matter what fluctuations take place on the output, the voltage is kept relatively steady. This makes it suitable for cases where a certain voltage is needed, such as in battery-powered e-readers where the same content needs to be loaded each time, and so the device needs the same voltage each time.

The BZT55C5V6-L0G can also be used in overvoltage protection. Overvoltage protection is a necessity for most technologies, since sudden changes in voltage can damage a device. The diode plays a vital role in overvoltage protection as it is capable of regulating the voltage, allowing for a gradual decrease in the output voltage to avoid any damage.

Working Principle

A Zener diode, like the BZT55C5V6-L0G, works through what is known as the Zener breakdown effect. When the voltage across two PN junctions within a semiconductor rises above a certain value, electrons are displaced within the junction and forced to move. This process continues to increase until the junction is completely filled, and the voltage across it has reached the breakdown voltage—which, in the case of the BZT55C5V6-L0G, is 5.6 Volts. This charge will then be redistributed throughout the circuit, meaning the voltage will remain relatively close to the diode’s breakdown voltage, regardless of the fluctuations on the output.

Conclusion

The BZT55C5V6-L0G is a SMA-qualified Zener diode that has a breakdown voltage of 5.6 Volts. It is most often used in digital and TTL circuits because it can quickly switch between 0 and 1. It can also be used for regulating voltage and for providing overvoltage protection. It works through the Zener breakdown effect, in which electrons are displaced inside a PN junction when the voltage reaches the diode’s breakdown voltage.

The specific data is subject to PDF, and the above content is for reference

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