BZT55C10-GS08 Allicdata Electronics
Allicdata Part #:

BZT55C10-GS08GITR-ND

Manufacturer Part#:

BZT55C10-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 10V 500MW SOD80
More Detail: Zener Diode 10V 500mW ±5% Surface Mount SOD-80 Qua...
DataSheet: BZT55C10-GS08 datasheetBZT55C10-GS08 Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 7.5V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Description

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The BZT55C10-GS08 is a zener diode typically used in power management applications. As a single-digit zener diode, it is often used to regulate the flow of electricity in electronic circuits.The primary application fields of BZT55C10-GS08 are mainly used in power-supply circuits, voltage-regulating circuits, small-signal circuits, overvoltage protection circuits, current limit circuits, and EMC noise suppression in sensitive systems.

In operation, the BZT55C10-GS08 acts as an electrical barrier for the current. It allows the current to flow in one direction but inhibits or regulates the current flow in the opposite direction. The amount of current allowed through the diode is determined by the zener voltage of the zener diode, which is a fixed voltage.

The working principle of the BZT55C10-GS08 is based on the PN junction diode. When a forward voltage is applied to the PN junction, electrons and holes are created at the junction due to a flow of charge carriers from the N-type material to the P-type material. This flow of charge carriers creates an avalanche effect, meaning a sudden rush of charge carriers in both directions. When the avalanche effect occurs, the voltage that was previously applied to the PN junction is bypassed, eliminating any potential for the current to flow in the opposite direction.

The BZT55C10-GS08 is a commonly-used PN junction diode because of its ability to withstand voltages greater than 7.2 volts. The diode also features a maximum power dissipation of 250 mW.

The BZT55C10-GS08 is a widely used zener diode because of its ability to regulate the flow of electricity in electronic circuits. It can be used in power-supply circuits, voltage-regulating circuits, small-signal circuits, overvoltage protection circuits, current limit circuits, and EMC noise suppression in sensitive systems. By utilizing the PN junction effect, the zener diode allows the current to flow in one direction while inhibiting the current flow in the opposite direction. As a result, the BZT55C10-GS08 is a versatile and useful tool for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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