BZT52C4V7T-TP

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The BZT52C4V7T-TP is a single Zener diode, which is designed to regulate voltage in circuits. It is constructed with an oxide passivated PN junction instead of an oxide layer to make it more reliable in operation. It is designed to operate over a wide range of applications that utilise anode breakdown.

The BZT52C4V7T-TP is a 300 mW Zener diode, suited for use in medium power applications such as power supplies, automotive applications and switch-mode applications. It has an operating voltage range between 4.7V and 4.4V, with a breakdown voltage of 5.6V. It also has a maximum reverse bias current of 300mA and a reverse-leakage current of 5µA.

The BZT52C4V7T-TP is a surface mount device, making it suitable for designs with limited board space. It is also a low capacitance diode with a reverse diode capacitance of only 0.7pF, making it suitable for high speed switching applications. It has a maximum operating temperature of 150°C.

The BZT52C4V7T-TP is designed to work by providing a voltage stablisation in circuits, when exposed to sudden voltage changes. It also allows electric current to flow in reverse asymmetric fashion, depending on the designed application. It is also used in signal processing and power control circuitry, as well as in power supply protection. It can be used as a voltage regulator, by clamping the signal voltage being input or output to the circuit, preventing over-voltage and over-current conditions.

The BZT52C4V7T-TP is used in many applications such as AC and DC power supplies, power line regulation, switched mode power supplies, automotive circuit protection and signal conditioning circuits. It can be used in digital protection from any faults, as a protection against over-voltage, over-current and over-temperature. It can also be used for replacing thermistors in temperature compensation applications.

The working principle of the BZT52C4V7T-TP is quite simple in design. It is designed to operate over a wide range of applications and utilises an anode breakdown process. A combination of the applied voltage and current will create a thin depletion layer at the anode which attracts the free electrons and allows the current to flow in reverse. When the reverse current reaches a certain level, the diode will break down, clamping the signal current at a specified voltage to prevent over-voltage or over-current conditions.

Overall, the BZT52C4V7T-TP is an ideal solution for a wide range of applications, including voltage regulation, AC and DC power supplies, and power line regulation. It has a low capacitance, allowing for high speed switching, and a breakdown voltage of 5.6V. With a maximum reverse bias current of 300mA and a wide operating voltage range, the BZT52C4V7T-TP is an ideal choice for any application that requires stable voltage regulation.

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