BZT52C11-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZT52C11-13 is a single common cathode, two terminal diode which finds its applications in telecommunications, plasma displays and logic level shifters. It is a type of a zener diode designed for precise zener voltage regulation and current regulation in both single-ended and differential mode operation. Generally it is used in a variety of general purpose applications such as voltage and current regulation, amplifiers, bridges, voltage resolution, etc. and also for overall efficiency and protection against reverse voltage in the system.

The BZT52C11-13 diode features an optimized zinc diffusion and a construction based on a high-performance n-type semi-insulating crystalline material. Its operating temperature range is −55 to +125 °C and it has a working power of up to500 mW. The diode’s maximum reverse voltage is 40V, while its maximum forward voltage is ≤2V. On top of that, its power dissipation is 100 mW and its Zener Impedance is 15.1Ω. The BZT52C11-13 diode has a reference max temperature coefficient of-0.06 V/ °C.

The working principle of a BZT52C11-13 is the same as that of any other Zener diode, where a breakdown occurs when the Zener voltage is exceeded. During the application of a reverse-bias voltage, the same electric field intensity exists in a diode regardless of the polarity of voltage. The reverse current or the leakage current is a function of the difference between the applied voltage and the inverse saturation current. When the breakdown voltage is reached, most of the electric field is increased in the reverse bias direction, which results in a greater voltage drop for the same reverse current. It is this increase in voltage across the junction which ensures the Zener breakdown current.

The BZT52C11-13 diodes are mainly used in circuits that require precise voltage regulation such as analog and digital circuits, power supplies, and amplifiers. The maximum power dissipation of this diode also makes it ideal for high-power circuits, such as amplifiers, rectifiers, and switching regulators. The diode’s fast switching speeds and high maximum reverse voltage make it well suited for high speed logic level shifting circuits, displaying circuits and other telecommunications applications.

The BZT52C11-13 diodes are available in a variety of packages, including TO-220, SOT-23, and SOT-573, and are suitable for applications such as AC-DC converters and voltage doublers. This device has a low leakage current and high thermal resistance, making it ideal for high temperature applications. The device also features a breakover voltage that is highly adjustable, making it flexible for a range of circuit requirements.

In summary, the BZT52C11-13 is a high performance, low power Zener diode designed for precise voltage regulation and current limiting in single-ended and differential modes. This device is ideal for applications such as AC-DC converters, voltage doublers, voltage and current regulation, amplifiers, bridges, and more. It is available in a variety of packages and has excellent thermal resistance and a high maximum reverse voltage. With its high efficiency, reliability, and adjustable breakover voltage, the BZT52C11-13 diode is the best choice for a range of commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference