Allicdata Part #: | BZT52C33-7DITR-ND |
Manufacturer Part#: |
BZT52C33-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER 33V 500MW SOD123 |
More Detail: | Zener Diode 33V 500mW ±6% Surface Mount SOD-123 |
DataSheet: | BZT52C33-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±6% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 23.1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | BZT52C33 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZT52C33-7 diode is one of the many single Zener diodes available for use in electronic circuit design. It is a surface-mount device with an SOD-123-3 package, and is rated for a maximum power dissipation of 500mW. It has a breakdown voltage of 33V at a temperature of 25°C, with a maximum reverse-leakage current of 500nA.The BZT52C33-7 is a versatile device, with a variety of applications in both low-power and high-power designs. Its low capacitance and low-leakage current make it an ideal choice for AC and DC line protection, clipper circuits, and voltage regulation. Its small size makes it well-suited for portable and mobile applications, such as headsets and other audio devices.The BZT52C33-7 is also commonly used in power supplies and voltage regulators. Its reverse Zener voltage makes it ideal for creating a regulated reference voltage for DC voltage regulators, and for providing protection against over-voltage conditions in power supplies.In addition, the BZT52C33-7 can be used for protection circuits and surge suppression. Its reverse-bias voltage capacity and low-leakage current make it well-suited for protecting sensitive devices from over-voltage situations, such as spikes or power surges.The working principle of the BZT52C33-7 is based on Zener diode physics. A Zener diode consists of a n-type semiconductor and a p-type semiconductor in a junction, and when a reverse-voltage is applied to the junction, a voltage drop occurs across the junction. The voltage drop is called the Zener breakdown voltage, and is a function of the p/n junction\'s design, as well as the temperature.When a reverse-voltage is applied to the BZT52C33-7, the reverse-leakage current flows through the junction, causing the voltage drop. This voltage drop acts as a clamp, limiting the maximum voltage that can pass through the junction. In other words, the voltage drops the maximum voltage to a predetermined value - the Zener voltage - which is the breakdown voltage of the device.Additionally, due to the nature of its construction, the BZT52C33-7 is temperature-compensated. This means that it is designed to maintain a constant Zener voltage over a wide range of temperatures. This feature makes the BZT52C33-7 an ideal choice for temperature-sensitive applications.In summary, the BZT52C33-7 is a versatile device with a wide range of applications in power supplies, voltage regulators, protection circuits and surge suppression. Its low-leakage current, reverse-bias voltage capacity and temperature compensation make it an ideal choice for high-power, low-power, portable, and mobile applications. Its working principle is based on the Zener breakdown voltage, which is a function of the device\'s p/n junction.
The specific data is subject to PDF, and the above content is for reference
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