BZT52C33-TP Allicdata Electronics
Allicdata Part #:

BZT52C33-TPMSTR-ND

Manufacturer Part#:

BZT52C33-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 33V 500MW SOD123
More Detail: Zener Diode 33V 500mW ±6% Surface Mount SOD-123
DataSheet: BZT52C33-TP datasheetBZT52C33-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02282
6000 +: $ 0.01985
15000 +: $ 0.01687
30000 +: $ 0.01588
75000 +: $ 0.01489
150000 +: $ 0.01323
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±6%
Power - Max: 500mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 23.1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: BZT52C33
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZT52C33-TP is a single Zener diode with a total capacitance of 0.33pF for a reverse voltage of 3V. It is designed for use in a wide range of applications, from high-frequency switching to power rectification. This device provides an ideal combination of low-noise, high-efficiency, and robust performance.

The BZT52C33-TP’s most common application field is in power rectification. The device is designed to convert alternating current (AC) electrical energy into direct current (DC). The diode is particularly well-suited for this task because its reverse voltage is relatively low and its voltage rating is relatively high, allowing it to process large amounts of power efficiently. Furthermore, its low-capacitance and low-noise design make it ideal for high-frequency applications.

The BZT52C33-TP’s working principle is relatively simple. When forward biased, the diode will allow AC current to flow through it in one direction. However, when reverse biased, the diode will block any current from flowing through it. This is due to the diode’s unique structure, which includes a region of heavily doped p-type material and a region of lightly doped n-type material. This structure effectively creates a natural electric barrier between the two regions, so that only electrons with enough energy (the forward voltage) are able to cross it.

The BZT52C33-TP is an ideal solution for a wide range of applications, from power rectification to high-frequency switching. Its relatively low reverse voltage and high voltage rating make it an excellent choice for power rectification, and its low-capacitance and low-noise design make it an ideal choice for high-frequency applications. Furthermore, its simple working principle means that it will be dependable and reliable over the long-term. The BZT52C33-TP is the perfect choice for engineers and designers who need a reliable and efficient single Zener diode in their projects.

The specific data is subject to PDF, and the above content is for reference

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