| Allicdata Part #: | BZT52C33S-TPMSTR-ND |
| Manufacturer Part#: |
BZT52C33S-TP |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE ZENER 33V 200MW SOD323 |
| More Detail: | Zener Diode 33V 200mW ±6% Surface Mount SOD-323 |
| DataSheet: |  BZT52C33S-TP Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.03043 |
| 6000 +: | $ 0.02646 |
| 15000 +: | $ 0.02249 |
| 30000 +: | $ 0.02117 |
| 75000 +: | $ 0.01985 |
| 150000 +: | $ 0.01764 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 33V |
| Tolerance: | ±6% |
| Power - Max: | 200mW |
| Impedance (Max) (Zzt): | 80 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 23.1V |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
| Operating Temperature: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-76, SOD-323 |
| Supplier Device Package: | SOD-323 |
| Base Part Number: | BZT52C33 |
Description
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Diodes, also known as electronic switches, are among the most popular electronic components. These semiconductor devices are used in many types of applications, from simple voltage-regulating circuits to more complex switching circuits. The BZT52C33S-TP is a single Zener diode from Central Semiconductor, featuring a surface mount design with an internal current-sensing circuitry. This diode is widely used in various applications, and in this article, we will discuss its application field and working principle.
The BZT52C33S-TP is a 2.0V Zener diode designed for surface-mount assembly. It offers excellent electrical parameters and is optimized for high-speed operation. Some of its features include a low dynamic impedance, low leakage current, and a high current-handling capability. As such, this diode is suitable for use in applications where excellent voltage regulation is required, such as in linear power supplies and regulators.
The BZT52C33S-TP Zener diode also offers an internal current-sensing circuitry. This feature makes the diode suitable for use in various current-sensor applications, such as current limiting, over-current protection, and over-voltage protection. The feature enables the diode to control current more easily and accurately.
The working principle of the BZT52C33S-TP is based on a standard PN junction diode. It is composed of two regions; one is made of N-type material while the other is made of P-type material. When the junction is forward biased, a high electric field is created, causing the electrons to flow freely through the junction. This is known as the conduction process.
When the junction is reverse biased, a high electrical field forms near the junction, allowing only a small amount of current to flow. This reverse bias allows the diode to regulate the current and voltage. In the case of the BZT52C33S-TP, the reverse breakdown voltage of the diode is 2.0V. This allows for controlling the voltage so that it does not exceed the specified value.
The BZT52C33S-TP is a highly versatile single Zener diode that can be used in various applications. Its features make it suitable for use in linear power supplies and regulators, as well as in current-sensing applications. It can also be used in over-current and over-voltage protection circuits. This diode offers excellent electrical characteristics, such as low dynamic impedance, low leakage current, and a high current-handling capability, making it a great choice for any electronic component project.
The specific data is subject to PDF, and the above content is for reference
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