BZT52C3V6-TP

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Diodes - Zener - Single

The BZT52C3V6-TP is a small singulated diode designed specifically for applications in which the breakdown voltage is an important factor. It utilizes current conduction in the forward direction and high-voltage breakdown in the reverse direction to provide an excellent low-end zener impedance and a rugged high-end zener shunting current. This diode has a single-ended common-cathode package configuration, which is ideal for use in both space-restricted areas and multiple-cheap applications.

Application Field and Working Principle

The BZT52C3V6-TP device is used in applications such as EMI suppression, DC isolation and noise reduction. Its common-cathode configuration enables the device to be used in tightly space-constrained applications. Additionally, it is suitable for low-cost multiple-processing applications since the device can be connected in a single package.

The working principle of the BZT52C3V6-TP is the same as that of any Zener diode. Zener diodes feature a reverse breakdown voltage that is greater than the forward voltage applied to the diode, resulting in a relatively low impedance across the diode. The BZT52C3V6-TP has a breakdown voltage of 3.6V. When the diode is forward-biased, current flows from the anode to the cathode. When a reverse voltage greater than 3.6V is applied to the diode, it begins to conduct due to what is known as the Avalanche effect, in which the amount of current flowing through the diode increases exponentially.

Due to its low cost and high performance, it is ideal for applications such as EBS protection, overvoltage protection, and electrostatic discharge protection. Additionally, its single-ended common-cathode package and higher zener impedance make it suitable for a wide range of applications. The device can be used in applications such as AC line couplers, clamper circuits, overvoltage protection and as rectification. Additionally, its common-cathode configuration can be used in multiple-cheap processes, making it ideal for consumer electronics applications.

Moreover, the BZT52C3V6-TP can be used as a temperature sensitive zener, due to its reverse current temperature coefficient. This is because the breakdown voltage changes with temperature. This feature makes the device useful for applications such as temperature compensation and precise voltage regulation.

Additionally, the BZT52C3V6-TP is also highly reliable, with a maximum failure rate of 10-5. This makes it suitable for long-term applications.

Overall, the BZT52C3V6-TP Zener diode is an excellent device for cost-effective and highly efficient designs. Its low forward voltage and high reverse voltage breakdown capabilities make it ideal for a range of applications including EMI suppression, DC isolation and noise reduction. Additionally, its single-ended common-cathode package configuration and higher zener impedance make it ideal for applications in space-restricted areas and multiple-cheap processing. Its temperature sensitivity also makes it suitable for temperature compensation and precise voltage regulation. Lastly, its high reliability makes it ideal for long-term applications.

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