Allicdata Part #: | BZT52C47-G3-18-ND |
Manufacturer Part#: |
BZT52C47-G3-18 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 47V 410MW SOD123 |
More Detail: | Zener Diode 47V 410mW ±5% Surface Mount SOD-123 |
DataSheet: | BZT52C47-G3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02553 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 47V |
Tolerance: | ±5% |
Power - Max: | 410mW |
Impedance (Max) (Zzt): | 70 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 35V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZT52C47-G3-18 is a single Zener diode which is a commonly used electronic component. It is used in all types of applications, from simple electronic circuits to complex electronic systems.
Zener diodes are made from semiconductor material and have a wide range of applications. A Zener diode is a special type of diode that allows current to flow in one direction and resists flow in the opposite direction. In a shared cathode environment, the Zener diode is normally biased in the reverse direction and acts as a voltage regulator.
The BZT52C47-G3-18 Zener diode is manufactured using silicone and has a maximum reverse voltage of 18V. It has a breakdown voltage of 3.2V and a wattage rating of 3 watts. It has a power dissipation of 2.5 watts and a maximum allowable power dissipation of 2.5 watts. It has a temperature coefficient of -27.45mV/℃, an operating temperature range of -55℃ to +130℃, and a storage temperature range of -55℃ to +150℃. Its insulation is classified as Grade B.
The BZT52C47-G3-18 Zener diode is a well-suited choice for applications such as voltage regulation, waveform clipping, waveform clamping, peak rectification, over-voltage protection, over-current protection, and capacitance coupling. It can be used in a variety of electronic circuits, such as: power supplies, RF amplifiers, switching circuits, electronic instruments, communication circuits, test systems, and instrument control systems.
The working principle of the BZT52C47-G3-18 Zener diode is based on the famous electrical tunnel effect. This effect occurs in an extremely narrow gap in the semiconductor film. When the applied bias voltage exceeds the breakdown voltage, the current will start to flow between the two sides of the gap. The voltage across the gap remains constant, even when the applied voltage is greater than the breakdown voltage, creating a highly stable and regulated voltage output.
The BZT52C47-G3-18 Zener diode also employs another important technology, which is JFET (Junction Field Effect Transistor) limitation technology. This technology allows for a more comprehensive current limiting effect than that of the simple Zener diode. The PNP transistors used in the JFET technology assist in protecting the circuit from any transient voltage surge that may occur.
The BZT52C47-G3-18 Zener diode is a reliable and highly stable electronic component that can be used in a variety of applications. It utilizes tunneling and JFET technology to achieve highly regulated and low leakage applications, making it ideal for many electronic circuits. By regulating the voltage to a specific level, it also helps to protect adjacent components from overvoltage surges.
The specific data is subject to PDF, and the above content is for reference
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