Allicdata Part #: | BZT52C47-HE3-08-ND |
Manufacturer Part#: |
BZT52C47-HE3-08 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 47V 410MW SOD123 |
More Detail: | Zener Diode 47V 410mW ±5% Surface Mount SOD-123 |
DataSheet: | BZT52C47-HE3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.02362 |
Power - Max: | 410mW |
Impedance (Max) (Zzt): | 70 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 35V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 47V |
Tolerance: | ±5% |
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Diodes - Zener - Single
The BZT52C47-HE3-08 is classified as a Zener Diode, which falls under the category of single diodes. Single diodes refer to a semiconductor device that allows electric current only in one direction and are commonly used as a switch. Zener diodes are distinct from regular single diodes because they are engineered to allow current to flow in the reverse direction, within a certain voltage range.
Application Field
The BZT52C47-HE3-08 is a dualCommon-Cathode Zener diode known for its low power consumption and small form factor. It is often used in precision voltage regulation applications due to its quality reverse voltage regulation (<5%). The device also boasts low leakage current (<5uA) and fast response time (<2uS). In addition, its low reverse voltage capabilities (5.1V) make it ideal for low power applications.
Due to its low profile and small form factor, this diode is used in many consumer electronics applications. It is often used in portable devices such as cell phones and tablets, along with smart watches and other wearable technologies. It is also used extensively in automotive electronics and is found in multimedia and entertainment systems.
Working Principle
Zener diodes regulate voltage by using a mechanism known as Zener breakdown. When a device experiences an increase in reverse current, the junction of the diode becomes reverse biased and as a result, the voltage at the p-n junction increases until the breakdown voltage is reached. At this point, the diode experiences a rapid increase in the reverse current and the voltage stays at a consistent and predictable level.
The BZT52C47-HE3-08 is designed to regulate a strain of 5.1V of reverse voltage. When the device experiences a voltage higher than the 5.1V, the reverse current of the device increases exponentially and regulates the voltage. The device is designed to limit the reverse current to a maximum of 40mA per diode, above which it will begin to degrade significantly.
The BZT52C47-HE3-08 is also designed to have low capacitance and resistive impedance to minimize the electrical noise they induce when controlling the voltage. This makes them ideally suited for high-frequency applications, such as those utilized in consumer electronics.
Conclusion
The BZT52C47-HE3-08 is a single dual-common cathode Zener diode that is quickly becoming a go-to component for voltage regulation purposes. This device offers low power consumption and form factor, making it ideal for consumer electronics, automotive electronics, and many other applications. It is engineered to provide quality reverse voltage regulation, low leakage current and fast response times. It also exhibits low capacitance and resistive impedance to reduce electrical noise in high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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