Allicdata Part #: | BZT52C6V8-FDITR-ND |
Manufacturer Part#: |
BZT52C6V8-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER 6.8V 500MW SOD123 |
More Detail: | Zener Diode 6.8V 500mW ±6% Surface Mount SOD-123 |
DataSheet: | BZT52C6V8-7-F Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±6% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 15 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 4V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | BZT52C6V8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction:
The BZT52C6V8-7-F is a series of Zener diode designed for a variety of applications. It is a single diode with a power rating of 1W and a breakdown voltage of 6.8V. The device is designed to limit the voltage as opposed to clamping it. In circuit diagrams, the single diode is usually indicated as a ‘D’ or a ‘d’ in a ‘Y’ shape.
Application Field:
The BZT52C6V8-7-F is intended for a wide range of applications. It can be used in unidirectional and bidirectional circuits, as well as for voltage regulation. It is often used as a series element between two load resistors to limit the voltage drop across the resistors during high current flow. The single diode is also required in design for monitoring and controlling the input and output voltages.
Apart from its ability to limit voltage, the BZT52C6V8-7-F can also be used to dampen or filter out system noise by providing a buffer between loads and ground. This buffer also reduces overshoot or undershoot, thus improving the overall performance of the circuit. The single diode can also be used in microelectronic applications to protect circuits from excessive power surges, or when a small amount of reverse current needs to be monitored.
Working Principle:
The working principle of the BZT52C6V8-7-F is quite simple. It consists of a junction between two layers of semiconductor material; an anode and a cathode. A reverse bias voltage is applied to the diode by connecting a positive voltage to the anode and a negative voltage to the cathode. Due to the potential difference between the two sides, current starts to flow through the diode when the breakdown voltage of the device is exceeded.
In the case of the BZT52C6V8-7-F, this voltage is 6.8V. The current passing through the diode is determined by the Zener effect at the junction of the diode. When the voltage across the diode exceeds the breakdown voltage, current begins to flow and the voltage across the diode is clamped to the breakdown voltage. This process is reversed if the voltage is less than the breakdown voltage, thus limiting the voltage.
Conclusion:
The BZT52C6V8-7-F is a Zener diode designed for a variety of applications. It can be used in unidirectional and bidirectional circuits, as well as for voltage regulation. The working principle of the single diode is quite simple. It consists of a junction between two layers of semiconductor material and current starts to flow through the diode when the breakdown voltage is exceeded. This voltage clamps the voltage across the diode and limits it.
The specific data is subject to PDF, and the above content is for reference
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