BZT52C6V8S-TP

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Diodes - Zener - Single

The BZT52C6V8S-TP is a Zener diode features a breakdown voltage of 6.8V and rapid response time, making it one of the most widely used single zener diodes in industry. It is ideal for switching, driving, regulating and protection circuits. Its maximum continuous forward current is 200mA (max) with a peak surge current of a 1A over a 1-millisecond period. As a member of the Zeners group, the BZT52C6V8S-TP is a general purpose diode that is widely used in automotive, consumer and industrial electronics and other high-power applications.

Application fields

The BZT52C6V8S-TP is suitable for use in voltage regulation, overvoltage protection, DC signal-clamping, and signal driving applications. Its low forward voltage drop of 1V and its 74dB minimum noise reduction makes it ideal for audio, video and automotive sensor signal applications. The device also offers good surge protection, high reliability, and low forward voltage suitable for energy-saving applications.

Working Principle

The BZT52C6V8S-TP is a two-terminal semiconductor device, with a breakdown voltage found in the Zener diode family. A Zener diode, by definition, relies on the special characteristics of the P-N junction, which minimizes the amount of current flowing through the device in normal operating conditions, and allows a certain amount of reverse current when the zener voltage of the P-N junction is exceeded. This reverse current generically referred to as the Zener current, flows as a result of the built-in reverse bias of the P-N junction.

The BZT52C6V8S-TP works by producing a stable zener voltage range of 6.2V to 6.8V, with a peak current of about 1A. When a reverse voltage (less than the 6.8V zener voltage) is applied to the silicon P-N junction, the junction depletion region acts as an insulator and very little current flows. If a voltage greater than the Zener voltage is applied, a large amount of current flows through the P-N junction. This current flow, termed the Zener current, can be used to regulate voltages, protect delicate microelectronics, or provide signal clamping to maintain a specific voltage level.

The BZT52C6V8S-TP has a reverse voltage range of 6.8V and is suitable for high-power applications. It also has a maximum surge current of 1A over a 1-millisecond time period and features a low forward voltage drop of 1V, making it ideal for high-frequency applications. It is rated to perform over a wide operating temperature range from -55°C to 125°C, with a maximum reverse voltage of 80V.

Other Specifications

Other important features for the BZT52C6V8S-TP include a virtually zero reverse leakage current, excellent reverse breakdown characteristics, low zener impedance, and a low capacitance between the anode and cathode capable of delivering high levels of protection and performance. Additionally, the device is designed with a lead-free component suitable for RoHS applications and is offered in a single SOD-123 package.

In conclusion, the BZT52C6V8S-TP is a single Zener diode manufactured by Z-Electronics, featuring a breakdown voltage of 6.8V and fast response time. It is ideal for voltage regulation, overvoltage protection, signal-clamping and signal driving while also offering good surge protection, high reliability and a low forward voltage drop suitable for energy-saving applications. It is available in an SOD-123 component and is suitable for RoHS applications.

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