Allicdata Part #: | BZT55A5V6-GS08-ND |
Manufacturer Part#: |
BZT55A5V6-GS08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 5.6V 500MW SOD80 |
More Detail: | Zener Diode 5.6V 500mW ±1% Surface Mount SOD-80 |
DataSheet: | BZT55A5V6-GS08 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±1% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 |
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BZT55A5V6-GS08 Application Field and Working Principle
The BZT55A5V6-GS08 diode is a single Zener diode for general purpose use. It operates in a wide temperature range of -55°C to +150°C and is capable of withstanding transient voltages up to 500V. The device can be used in a wide variety of applications including overvoltage protection, power management, and transient suppression.
Features and Benefits
The BZT55A5V6-GS08 diode is designed to protect electronic components from overvoltage and other types of transient events. The device features a low forward voltage drop that minimizes power dissipation, and a 200 mA continuous current rating that can handle sustained voltage spikes. The diode also features a low Zener impedance, which helps to reduce the impact of increased impedance due to temperature fluctuations. In addition, the device has an PN junction isolation, which allows for the device to be used in high-frequency applications with minimal additional components.
Working Principle
The BZT55A5V6-GS08 diode works by utilizing the Zener effect. When a voltage is applied across the device, it will cause a potential barrier between the p- and n-type regions of the junction. This potential barrier will then create an electric field that acts essentially like an insulating barrier, which prevents current from passing through the junction. The resulting voltage across the device becomes relatively stable with changes in current.
The BZT55A5V6-GS08 diode also features a negative temperature coefficient. This means that as the temperature increases, the Zener voltage of the device decreases. This helps to reduce the impact of increased current due to temperature fluctuations. The voltage of the device will remain relatively stable over the entire temperature range.
Applications
The BZT55A5V6-GS08 diode can be used in a variety of applications including overvoltage protection, power management, transient suppression, and high-frequency filtering. The device is particularly well-suited for use in audio or video broadcast systems, and embedded systems that require voltage protection or transient suppression. The device can also be used in automotive circuits, and DC-DC converter systems.
The specific data is subject to PDF, and the above content is for reference
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