BZT55A6V8-GS18

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BZT55A6V8-GS18 Application Field and Working Principle

The BZT55A6V8-GS18 is a single Zener diode manufactured by the American semiconductor leader, NTE Electronics. It was designed to meet the needs of various applications and is well-suited for both industrial and consumer electronics.

The BZT55A6V8-GS18 is a silicon Zener diode which has a reverse breakdown voltage of 6.8 Volts. It has a peak current rating of 500 mA and able to handle a power dissipation of 500 mw. It has a maximum operating temperature of +150°C and a storage temperature of -65-150°C. It is also RoHS compliant which means that it meets the requirements of the Restriction on Hazardous Substances (RoHS) Directive 2011/65/EU.

The main application field of the BZT55A6V8-GS18 is in the protection of various electronic devices from transient overvoltage conditions. It can also be used to regulate the voltage of an electronic system. It is used in voltage regulation circuits, voltage multipliers, rectifiers, overvoltage protection circuits, sample-and-hold circuits, and in applications where the supply voltage needs to be limited to a certain range. As such, the BZT55A6V8-GS18 is widely used in industrial, automotive, consumer and other applications.

Working Principle of the BZT55A6V8-GS18 Zener Diode

The BZT55A6V8-GS18 is a single Zener diode that has a breakdown voltage of 6.8 volts. It is a semiconductor device whose main function is to maintain a voltage drop across its terminals while in the forward-biased condition (forward biasing of a diode occurs when the positive terminal of a voltage source is connected to the anode of the diode and the negative terminal is connected to the cathode of the diode). In the forward-biased condition, the BZT55A6V8-GS18 will conduct current until the voltage between its positive and negative terminals reaches 6.8 volts, which is its breakdown voltage.

Once the breakdown voltage of 6.8 volts is reached, the Zener diode begins to operate in the reverse-biased condition (reverse-biasing of a diode occurs when the positive terminal of the voltage source is connected to the cathode of the diode and the negative terminal of the voltage source is connected to the anode of the diode). In this condition, the BZT55A6V8-GS18 begins to operate as a voltage regulator, preventing any further increase in voltage above 6.8 volts. As such, the BZT55A6V8-GS18 Zener diode is used to regulate the voltage and protect against transient overvoltage conditions.

The BZT55A6V8-GS18 is able to dissipate up to 500 mW of power, which is also its peak current rating, and has a maximum operating temperature of +150°C. The BZT55A6V8-GS18 is RoHS compliant which means that it meets the requirements of the Restriction on Hazardous Substances (RoHS) Directive 2011/65/EU.

Conclusion

The BZT55A6V8-GS18 is a single Zener diode that was designed to meet the needs of various applications and is well-suited for both industrial and consumer electronics. It has a reverse breakdown voltage of 6.8 Volts and can handle a power dissipation of up to 500 mW. It is mainly used in the protection of various electronic devices from transient overvoltage conditions and for voltage regulation circuits. The BZT55A6V8-GS18 is RoHS compliant which means that it meets the requirements of the Restriction on Hazardous Substances (RoHS) Directive 2011/65/EU.

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