BZT55A8V2-GS08 Allicdata Electronics
Allicdata Part #:

BZT55A8V2-GS08-ND

Manufacturer Part#:

BZT55A8V2-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 8.2V 500MW SOD80
More Detail: Zener Diode 8.2V 500mW ±1% Surface Mount SOD-80
DataSheet: BZT55A8V2-GS08 datasheetBZT55A8V2-GS08 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±1%
Power - Max: 500mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Description

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Introduction

The BZT55A8V2-GS08 is a single zener diode which offers general use power rectification and voltage regulation. The diode is capable of withstanding higher reverse voltage drops and higher overall leakage currents than standard diodes. It features a low maximum forward voltage drop, fast switching times and excellent thermal and electrical stability.

Applications

The BZT55A8V2-GS08 is a versatile diode that can be used in a wide range of applications. It is well suited for use in voltage regulation, especially in automotive and consumer electronics applications. It can also be used as a shuntcomponent in clipper or rectifier circuits, as well as in switching applications.

Working Principle

The BZT55A8V2-GS08 works by allowing current to pass through it in one direction (forward bias) and blocking current in the other direction (reverse bias). This effect is called “rectification” and is achieved by the use of a P-N junction. The P-N junction has a built in voltage, or potential barrier, that is overcome by the application of a forward bias voltage. When forward biased, the electric field is strong enough to overcome the barrier and current starts to flow. However, when a reverse bias voltage is applied to the P-N junction, the electric field is not strong enough to overcome the built in barrier and current stops flowing. The BZT55A8V2-GS08 also has zener breakdown capabilities, which enables it to operate like a voltage regulator. When the reverse bias voltage is increased to the zener break down point, current is then allowed to start flowing in the reverse direction. This is known as zener breakdown and it allows the diode to regulate voltage between two possible values.

Conclusion

The BZT55A8V2-GS08 is an excellent choice for application that require the use of a single zener diode for voltage regulation and rectification. It is well suited for automotive, consumer electronics and switching applications due to its low forward voltage drop, fast switching times and excellent thermal and electrical stability. Its zener breakdown capabilities also make it useful for applications that require voltage regulation or current limiting.

The specific data is subject to PDF, and the above content is for reference

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