BZT55B3V3-GS18 Allicdata Electronics
Allicdata Part #:

BZT55B3V3-GS18-ND

Manufacturer Part#:

BZT55B3V3-GS18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 3.3V 500MW SOD80
More Detail: Zener Diode 3.3V 500mW ±2% Surface Mount SOD-80 Qu...
DataSheet: BZT55B3V3-GS18 datasheetBZT55B3V3-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02249
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Description

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The BZT55B3V3-GS18 is a single Zener diode commonly used in low current voltage regulation applications. It is made from a N-type material, with a P-type substrate and has a power dissipation of 300 mW (2.0 V @ 150 mA). It is available in a small SOT-23-5 package and features a very low typical Leaker Current, typically 0.1 μA at 25 °C.

The BZT55B3V3-GS18 offers a wide supply voltage range from 2.0 V to 18 V. Its maximum reverse voltage rating is 18 V, its forward voltage drop is 0.17 V, and its thermal impedance is 17.5 °C/W. This diode offers very good temperature stability and noise immunity, which makes it ideal for low power regulation applications. It is also suitable for use in automotive, consumer, and industrial applications where thermal protection and reliability are needed.

The BZT55B3V3-GS18 is a low cost, low dropout, low noise, high temperature, high voltage, and high performance device, suitable for use in many different applications. The device is also RoHS compliant and has an operating temperature range from –55° to 175°C.

The working principle of the BZT55B3V3-GS18 diode is based on the Zener effect, which is the result of breakdown of the PN junction under certain voltage and current conditions. When the applied voltage is increased beyond the reverse breakdown voltage of the P-N junction, the current increases sharply, resulting in the Zener voltage being maintained across the junction. The Zener voltage is determined by the amount of doping in the material and the breakdown voltage of the diode. The Zener diode behaves like a voltage-controlled resistor, and its voltage is determined by its Zener voltage.

The main application of the BZT55B3V3-GS18 is low power voltage regulation. It can be used to stabilize the input voltage for microprocessors, and to provide a regulated voltage for op-amp circuits, A/D converters, and digital filters, to name a few. It can also be used in low voltage voltage reference designs, in low power precision voltage amplifiers, and in voltage clamping applications. This diode is also suitable for use in automotive, consumer, and industrial applications where thermal protection and reliability are needed.

The BZT55B3V3-GS18 is a low cost, low dropout, low noise, high temperature, high voltage, and high performance device, suitable for use in many different applications. With its wide range of operating temperatures, it offers excellent thermal stability and noise immunity, making it ideal for low power voltage regulation. With its wide supply voltage range and low thermal impedance, it is a great choice for low power device applications.

The specific data is subject to PDF, and the above content is for reference

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