BZT55C43 L0G Allicdata Electronics
Allicdata Part #:

BZT55C43L0G-ND

Manufacturer Part#:

BZT55C43 L0G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 43V 500MW MINI MELF
More Detail: Zener Diode 43V 500mW ±5% Surface Mount Mini MELF
DataSheet: BZT55C43 L0G datasheetBZT55C43 L0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01548
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 43V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 32V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

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A BZT55C43L0G diode is a single Zener diode offering a wide range of features. This diode has an exceptionally high breakdown voltage of 43 volts and a low dynamic impedance of 35 mohm. The device is capable of offering a high output current of 4A with a high level of reliability and power dissipation, thanks to its epoxy encapsulated bindering and its anodized hermetic seal.

The BZT55C43L0G diode can be used in many applications such as Voltage Regulation, Rectification, Voltage Switching, and ESD Protection. In terms of voltage regulation, the diode is able to provide smooth and accurate outputs. The diode ensures that the output voltage remains constant even in fluctuations in input voltage. In terms of rectification, it is a valuable source of protection against negative biases thus enabling it to work effectively as a protection diode in the presence of reverse voltages. Additionally, it can be used as a voltage switching device to convert DC to AC voltage and vice versa.

The working principle of the BZT55C43L0G is based on a PN junction. The diode behaves like a resistor when the voltage across it is equal to or below its breakdown voltage. This characteristic is called zener breakdown, and it allows the diode to remain in its high state when the applied voltage is less than the breakdown voltage. When the voltage increases beyond the breakdown voltage, the diode voltage increases significantly causing the diode to become conducting. This conducting phase enables the diode to perform functions such as rectification and voltage regulation.

In conclusion, the BZT55C43L0G is a single Zener diode with high breakdown voltage and low dynamic impedance. It offers various applications ranging from voltage regulation and rectification to voltage switching and ESD protection. Its working principle is based on a PN junction, wherein the diode behaves like a resistor when the voltage across it is less than or equal to its breakdown voltage.

The specific data is subject to PDF, and the above content is for reference

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