Allicdata Part #: | BZT55C4V7-GS08GITR-ND |
Manufacturer Part#: |
BZT55C4V7-GS08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 4.7V 500MW SOD80 |
More Detail: | Zener Diode 4.7V 500mW ±5% Surface Mount SOD-80 Qu... |
DataSheet: | BZT55C4V7-GS08 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 4.7V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-80 Variant |
Supplier Device Package: | SOD-80 QuadroMELF |
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Diodes - Zener - Single
The BZT55C4V7-GS08 is a type of zener diode, which is a specialized form of diode designed to operate in the reverse break down region. Zener diodes act as a voltage regulator within electronic circuits, regulating the voltage within the circuit to a set level, regardless of input variations. This is particularly useful for powering sensitive circuits, as a regulated power supply is critical for many types of circuits.
The BZT55C4V7-GS08 is a single zener diode and belongs to Vishay\'s Don-Tin plated subminiature diode family. It is designed to withstand high reverse voltages up to 5.6V, with a maximum power dissipation of 500mW and an operating temperature range between -55°C and +150°C. The device also has a zener voltage of 4.7V and a maximum zener impedance of 10V.
The underlying principle of operation of a zener diode, such as the BZT55C4V7-GS08, is the same as for a conventional diode, with the main difference being the higher doping levels of the p-n junction. The extra doping allows the current to move in either direction through the junction, even if the external voltage forces the voltage across the junction to exceed the breakdown voltage. To keep the reverse current at a specified level, the diode must be heavily doped, resulting in higher breakdown voltage.
The BZT55C4V7-GS08 is a versatile device and can be used in a wide range of applications. It is often used in power supplies and voltage regulation circuits, providing reliable voltage regulation even in the face of external voltage variations. It can also be used in clipper circuits to clamp down on too high a voltage and protect sensitive components. Additionally, it is used as a voltage reference in digital circuits and a voltage clamp in TV/monitor sets.
In summary, the BZT55C4V7-GS08 is a single zener diode with a breakdown voltage of 4.7V and a power dissipation of 500mW. It is designed to be used in a wide range of voltage regulated and over-voltage protection applications, due to its superior stability and reliability.
The specific data is subject to PDF, and the above content is for reference
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