BZT585B20T-7

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Diodes are an essential part of the semiconductor industry. They are used in many different applications, from rectifying electricity to providing power to integrated circuits. The Zener diode is one such type of diode that has specific properties that make it applicable in its own right. The BZT585B20T-7 is a Zener diode that is specially manufactured for its reliable electrical performance and resilience to heat and vibration.

The BZT585B20T-7 is a single junction Zener diode that has a maximum breakdown voltage of 20V and a maximum reverse power dissipation of 225mW. It is classed as a signal diode and is manufacturing in a package featuring a small DO-35 case. This diode has a reverse resistance of 2.3K and a forward no load voltage of 0.8V. Its dimensions measure 2.45 x 1.4 x 0.8mm and its weight is 0.7g.

A Zener diode is a type of diode that features a specially designed p-n junction. This p-n junction is heavily doped, meaning that there are far more electrons in the p-type layer than the n-type layer. This adjustment allows for the reverse breakdown voltage value to become very low, resulting in a low “knee voltage”, which allows for greater reverse current to flow before breakdown occurs. This is often used in a variety of different applications where large currents are expected to flow over time.

A way of visualising the working principle of a Zener diode is by understanding it as an electrical switch. When the diode is reverse biased, there is no electric current flowing, as the applied voltage is less than the reverse breakdown voltage. When the applied voltage increases, and surpasses the kennel voltage, the diode is then said to be forward biased, allowing current to flow through it.

The BZT585B20T-7 is a common choice for a variety of applications. Being a general purpose signal diode, it is suitable for rectification, clipping and clamping circuit, as well as being used to protect components from extreme voltages. It is also commonly used in power conversion and surge protection, due to its low reverse leakage current and excellent electrical characteristics and stability.

This Zener diode is also manufactured to be highly resilient and is immune to effects such as vibrations and shock. It is also resistant against extreme temperature and has an operating temperature range between -65 and +150⁰C and a storage temperature ranging from -65 and +175⁰C. Its high resistance against extreme temperature makes it suitable for automotive applications where there is a high level of vibration and also fast temperature fluctuations.

The BZT585B20T-7 is ideal for applications where great precision, resilience and reliability are desired. Its high maximum breakdown voltage and low reverse leakage current makes it suitable for a variety of applications, both in the automotive industry, as well as in computing, instrumentation, power supplies and even solar cells. Its wide range of features makes it suitable for a variety of uses, making it a trusted and improved choice for manufacturers looking to create the most reliable products.

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