BZT585B2V4T-7

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The BZT585B2V4T-7 is a silicon planar type, power Zener diode. Its name signifies that it has a breakdown voltage of 2.4 V, a Zener voltage tolerance of ± 5%, and a maximum power dissipation of 500 mW. The BZT585B2V4T-7 is designed for use in applications that require high reliability and superior stability. Most commonly, it is used in power supply or voltage stabilization circuits.

A zener diode is a special semiconductor that is designed to function in reverse bias mode, unlike the forward bias diodes that we are accustomed to. That is, electrons are blocked by the diode when it is in reverse biasing mode, and allowed to flow when in forward biasing mode. When a reverse voltage is applied, typically less than the breakdown voltage of the diode, a large current starts to flow through the diode, resulting in a voltage drop across the diode that depends on that current. When the current is kept at a certain level, the voltage drop across the diode will remain constant.

The application field of the BZT585B2V4T-7 involves electrical systems that require only adjustable voltage and current levels. This can include LEDs, transistor string circuits, radio circuits, power supply circuits, and more. It is also used in a wide array of automotive, medical, industrial and commercial applications.

The working principle of the BZT585B2V4T-7 is fairly simple. When the reverse voltage is applied, it triggers a breakdown effect, resulting in a large increase in current flow and a voltage drop across the diode. The voltage drop, and consequently, the total current through the diode is determined by the breakdown voltage of the diode. This allows for better voltage stabilization, as the voltage drop will remain constant provided the current is kept within the rated value.

In conclusion, the BZT585B2V4T-7 is a silicon planar power Zener diode designed to provide reliable and stable voltage stabilization. It is most often used in applications that require adjustable voltage and current levels, such as those found in automotive, medical, industrial and commercial applications. Its working principle is based on the breakdown effect that occurs when a reverse voltage is applied to the diode, resulting in a large increase in current flow and a voltage drop across the diode.

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