BZT585B33T-7

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The BZT585B33T-7 is a single zener diode from the BZT series from Diodes Incorporated. With a nominal zener voltage of 33V and a Stand-Off voltage of 43V, the BZT585B33T-7 is usually used in power supply and other power electronics applications. Its low-leakage current and low-temperature coefficient of the zener voltage makes it ideal for linear regulators.

The Zener diode operates as a voltage regulator by exploiting the reverse breakdown voltage characteristic. In this regime, a small increase in the current passing through the diode causes a large decrease in the voltage across the diode. The breakdown voltage of the diode is usually set by adjustment to a desired practical value. This then allows the zener diode to regulate output voltage to a desired value. When connected in reverse, the zener diode is reverse biased. This causes the diode to only break down when the reverse bias voltage is increased to the desired Zener breakdown voltage. This allows current to flow from the anode to the cathode of the diode.

In the case of the BZT585B33T-7, the Zener breakdown voltage is 33V. This helps to regulate the voltage across the diode to the desired level. The BZT585B33T-7 is commonly used in applications such as power supplies, voltage multipliers, voltage regulators, especially linear type, and in power converters.

The advantages of using the BZT585B33T-7 are its low-leakage current, low-temperature coefficient of the breakdown voltage, and low-power consumption. Furthermore, it is also well suited for compact circuit designs and does not require a large amount of space.

In conclusion, the BZT585B33T-7 is a single zener diode from Diodes Incorporated that has a nominal zener voltage of 33V and a Stand-Off voltage of 43V. It is commonly used in power supply, voltage regulator, and other power electronics applications due to its low-leakage current, low-temperature coefficient of the breakdown voltage, and low-power consumption.

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