Allicdata Part #: | BZT585B6V2T-7DITR-ND |
Manufacturer Part#: |
BZT585B6V2T-7 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER 6.2V 350MW SOD523 |
More Detail: | Zener Diode 6.2V 350mW ±2% Surface Mount SOD-523 |
DataSheet: | BZT585B6V2T-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02716 |
6000 +: | $ 0.02362 |
15000 +: | $ 0.02008 |
30000 +: | $ 0.01889 |
75000 +: | $ 0.01772 |
150000 +: | $ 0.01535 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.2V |
Tolerance: | ±2% |
Power - Max: | 350mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 4V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 100mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Base Part Number: | BZT585B6V2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A BZT585B6V2T-7 is a single zener diode that can finds its applications in a variety of electronic circuits. This diode has an organized voltage rating of 6V, with a power dissipation of 500 mW. It is used widely in circuits such as voltage regulators, bias stabilization, reference circuits, and surge protective circuits. Let us learn more about the application field and working principle of the BZT585B6V2T-7.
Application Field
The BZT585B6V2T-7 is encapsulated in a TO-227AA(I) surface mountable plastic body diode and has a breakdown voltage of 5.85V. Offering a maximum power dissipation of 500 mW, the diode is usually applied in voltage regulating circuits, reference circuits, and surge protection, helping protect delicate components from high-voltage spikes.
It can also be used in other applications such as transient suppression, bias stabilization and voltage clamping, to achieve higher reliability and improved power efficiency. It has a wide range of other applications too such as in radio-frequency (RF) communication, sensor applications, data conversion, power line noise filters, and telecommunication systems.
Working Principle
The BZT585B6V2T-7 is a zener diode that operates using the opposite principle of a standard diode. Standard diodes typically allow current to flow in one direction, while zener diodes can allow current to flow in both directions. This diode utilizes the zener breakdown effect. When the zener diode is reversed biased above the breakdown voltage, an avalanche breakdown of the silicon p-n junction occurs, causing a large and constant current to flow.
The amount of this current is measured by the reverse leakage current, and it is typically in the range from 2 μA to 2 mA. The zener voltage and zener current are affected by external factors such as the circuit design, temperature, and capacitance. The zener voltage rating of the BZT585B6V2T-7 is 6V, and the maximum power dissipation is 500 mW.
The reverse breakdown of a zener diode is useful for many applications. It can provide a stabilized voltage output, allowing a variety of circuits to be protected from voltage spikes. The BZT585B6V2T-7 can also be used in RF communication, power line noise filters, and other sensitive applications.
Conclusion
The BZT585B6V2T-7 is a single zener diode with an organized voltage rating of 6V and a maximum power dissipation of 500 mW. It is widely used in a variety of applications such as voltage regulators, reference circuits, surge protective circuits, transient suppression, bias stabilization, RF communication, power line noise filters, and more. The diode operates using the zener breakdown effect, where an avalanche breakdown occurs when the diode is biased above its breakdown voltage, allowing a large and constant current to flow.
The specific data is subject to PDF, and the above content is for reference
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