C2M1000170D

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C2M1000170D is a novel two-in-one-pack FETs device composed of P- and N-channel at the same package. It is a Power MOSFET device that belongs to the family of single MOSFETs, as far as design, fabrication, and application are concerned.

The superior and innovative 2-in-1 package technology used in the design of this device makes it suitable for many applications that require robust, efficient, and cost-effective performance. It comes with a dielectric strength of 150V and 150V breakdown voltage tolerance, which makes it ideal for power conversion applications. The device has an extended operating temperature range of -55 to 150°C. Furthermore, it has an average drain-source on-resistance (RDS_on) of 9 ohm, and a max. drain current of 10A, allowing stable and reliable operations. The silicone packaging used in C2M1000170D protects it from moisture and any other environmental hazardous factors.

This particular device is suitable for many industrial, consumer electronics, and automotive applications, such as DC-DC switch mode power supply converters, inverters, motor drivers, lamps control, automotive bulbs, welding Machines, and UPS. C2M1000170D is particularly popular among the automotive industry as it complies with the AEC-Q101 standards and has very low rDS(on) which ensures high efficiency.

C2M1000170D device is enabled by the working principle of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). The fundamental idea behind the working of this device is based on two different types of transistor: N-channel and P-channel. Both of these transistors rely on the action of a metal oxide film between the channel semiconductor and the gate. The channel of the transistor is constructed of a semiconductor material doped with impurities to create a region that is either positively charged (P-Channel FET) or negatively charged (N-Channel FET). Gate-Source voltage is used to induce "inversion" in the channel, which is a process by which the majority carriers of the semiconductor material in the channel become the minority carriers. This "inversion" results in the formation of a transversely conducting channel. The width of this channel is dependent on the amount of gate-source voltage, also known as the "gate voltage", applied. The current in the channel of the transistor is proportional to the open circuit gate voltage and is inhibited by the channel resistance of the device. Applying a gate voltage to the gate of the FET induces the semiconductor material in the channel to change from the "off" to the "on" state. In the "on" state, the channel of the transistor forms a low resistance connection between its source and drain electrodes, and current flow is possible. This metal-oxide leads to the N-channel MOSFET working with the Gate voltage controlling the current flow from Drain to Source. Similarly, the P-channel MOSFET works by controlling the current flow from Source to Drain with the Gate voltage. Both of these MOSFETs provide low gate-source capacitance, making them suitable for high-speed analog and pulse applications.

C2M1000170D is a state-of-the-art single MOSFET device designed to provide optimal performance and cost-effectiveness. Its 2-in-1 package technology ensures easy installation and maintenance. The device has broad applications in power converters, motor drivers, and other fields. Its compatibility with AEC-Q101 standards makes it popular within the automotive industry. Moreover, its working principle of metal-oxide-semiconductor field effect transistor enables it to deliver reliable, robust, and efficient performance.

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