C2M1000170J

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The C2M100017J is a N-channel MOSFET that is commonly used in high-power applications. This MOSFET is part of a series of transistors created by Cree Incorporated, and is specifically designed for high current applications, such as audio circuits, heater control, power converters, and high-voltage switching applications.

The MOSFET utilizes a high-temperature oxide planar construction to provide excellent switching performance. Additionally, the C2M10017J benefits from low output capacitance and low gate-source capacitance, making it an ideal choice for applications that require high switching frequencies.

The C2M10017J is available in a variety of package types, such as the TO-220, TO-252, and TO-262 packages. This MOSFET has a drain-source voltage rating of 100V, and a gate-source voltage rating of 20V. It is also available in a 3-pin and 4-pin configuration. Furthermore, this MOSFET can handle a drain-source current of up to 20A.

The working principle of the C2M10017J is based on the operation of an N-type MOSFET. This device utilizes three terminals, known as the source, gate, and drain. When a voltage is applied to the gate terminal, a current flows through the source terminal to the drain terminal. This current flow is regulated by the gate voltage. As the gate voltage increases, the current flow increases. Conversely, as the gate voltage decreases, the current flow decreases. This allows for precise control of the current flow.

The C2M10017J is a versatile device, which can be used in a variety of applications. For instance, this MOSFET is commonly used in audio amplifiers and power supplies, as it can provide precise current control. Additionally, it can be used in pulse-width modulation (PWM) controllers, such as in motor drivers and LED drivers. Furthermore, it can be used in high-speed switching applications, such as in wireless chargers.

In summary, the C2M10017J is a N-channel MOSFET that is ideal for high-power applications. It offers a wide range of features, such as a high-temperature oxide planar construction and low capacitance, that make it suitable for high-speed switching applications. Furthermore, this MOSFET can handle a drain-source current of up to 20A. The working principle of the C2M10017J is based on the operation of an N-type MOSFET, which allows for precise control of current flow. This makes the C2M10017J an ideal choice for a variety of applications, such as audio amplifiers, power supplies, motor drivers, and LED drivers.

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