
Allicdata Part #: | CMPT5551EBK-ND |
Manufacturer Part#: |
CMPT5551E BK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP |
More Detail: | Bipolar (BJT) Transistor NPN 220V 600mA 300MHz 350... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 220V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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Bipolar junction transistors (BJT) constitute an essential constituent of electronic components. The popularity of BJT stems from their characteristics of low power consumption, high reliability, and high switching speed. As a single BJT, CMPT5551E BK stands out as it reunites these features in a miniaturized package. Thus, this article aims to approach the features and functioning of this particular BJT, as well as its comparison to similar components.
To begin, CMPT5551E BK is a miniaturized bipolar junction transistor (BJT) with a small footprint enabling the designer to easily fit it in the circuit. It works with a voltage range of 5V, and a power dissipation of 500 mW. It is made of a lightweight 1.5 mm resin package, and provides enhanced stability against mechanical shock and humidity. Considering these features as well as its low power consumption, this BJT is primarily suitable for automotive, consumer electronics, and IoT applications.
The most remarkable advantages of CMPT5551E BK is found in its switching speed. This high speed is sourced from the programmable collector-emitter voltage and power dissipation, together with its special build increase its speed and decreases the distortion of the signal more than traditional BJTs. This feature makes it ideal for industrial applications such as high-speed pulse circuits, and motor control applications.
In terms of internal construction, CMPT5551E BK consists of a collector, base, and emitter. It works as a current amplifier with the base-collector junction being responsible for the amplification of current signals. The base–emitter junction will act as a switch allowing or prohibiting the flow of current. Meaning that when there is no voltage or a low voltage on the base terminal, the transistor will remain open with no current flow, and when a higher voltage signal is applied to the base the transistor will be closed allowing the current to flow from the collector to the emitter in the signal.
On the other hand, CMPT5551E BK has several competitors which bring disparate features to the table. PMS7101FEXX-TR is also a miniaturized BJT also with a small footprint, and a wide voltage range of 12V. It is particularly suitable for temperature monitoring, current sensor, and safety circuits. The consideration between both comes from personal needs of the designer, such as the voltage range and dissipation characteristic, as well as the convenience of the circuit.
After reevaluating the features and functioning of CMPT5551E BK, it is visible that this BJT is a reliable and professional option for automotive, consumer electronics, and IoT applications due to its characteristics of small size and low power consumption. The programmable collector-emitter voltage in addition made it one of the favorites in industrial applications such as high-speed pulse circuits and motor control applications. Although similar components can appear to make more attractive alternatives, the designer should consider the convenience of the circuit and the desired features when making their final choice.
The specific data is subject to PDF, and the above content is for reference
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