CMPTA92 TR Allicdata Electronics
Allicdata Part #:

CMPTA92TR-ND

Manufacturer Part#:

CMPTA92 TR

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP 300V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 350m...
DataSheet: CMPTA92 TR datasheetCMPTA92 TR Datasheet/PDF
Quantity: 6000
3000 +: $ 0.06811
6000 +: $ 0.06398
15000 +: $ 0.05985
30000 +: $ 0.05504
Stock 6000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 350mW
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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The CMPTA92 Transistor is a Bipolar Junction Transistor (BJT) Single that is commonly used in various applications such as audio systems, motor control, and other high voltage and power solutions. The CMPTA92 is a bipolar NPN silicon planar transistor primarily used for high power amplification and switching applications. It is designed to offer excellent linearity and speed performance, while also providing excellent thermal stability and a wide operating voltage range.

The CMPTA92 transistor is composed of four distinct areas: the collector, base, and emitter terminals, and the substrate. The Collector, base and emitter are connected through the terminal pins,while the substrate is the part of the device that the collector, base and emitter terminals are connected to. The substrate serves as a support and electrical connection between the collector, base and emitter terminals, and is also responsible for dissipating the heat generated by current through the device.

The collector and base terminals of the CMPTA92 transistor are designed to be connected to a positive voltage, creating a forward bias condition; while the emitter terminal is connected to a negative voltage, creating a reversed bias within the device. When the forward bias is applied, the electrons in the collector inject into the collector-base junction boundary, creating holes in the emitter-base junction boundary. This causes the emitter and base to act like an emitter diode, as they evenly supply holes through the collector/emitter junction. This causes a current to flow from the emitter to the collector, as the holes generated in the emitter-base junction are attracted to the negative voltage in the emitter.

The CMPTA92 transistor is useful for applications requiring high frequency, high power and high voltage operations. It is capable of operating at frequencies up to 1GHz, with current capabilities up to 25A and an operating voltage between 6 and 700V. This makes it suitable for a wide range of applications including audio systems, motor control and other high power and voltage solutions. Additionally, the CMPTA92 is also designed to be thermally stable, which ensures that its parameters do not change drastically under high temperature conditions.

In conclusion, the CMPTA92 Transistor is a silicon planar NPN Bipolar Junction Transistor that is commonly used for high power amplification and switching applications. It has the capability of operating at high frequencies up to 1GHz and offers a wide operating voltage range between 6 and 700V. The CMPTA92 is also designed to be thermally stable, which ensures that it can perform well under conditions requiring high temperatures and currents. As such, the CMPTA92 is an ideal choice for applications that require high power, high voltage, and high frequency operation.

The specific data is subject to PDF, and the above content is for reference

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