CMPTA29 TR Allicdata Electronics
Allicdata Part #:

CMPTA29TR-ND

Manufacturer Part#:

CMPTA29 TR

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN DARL 100V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 500...
DataSheet: CMPTA29 TR datasheetCMPTA29 TR Datasheet/PDF
Quantity: 48000
3000 +: $ 0.09843
6000 +: $ 0.09208
15000 +: $ 0.08573
30000 +: $ 0.08467
Stock 48000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 350mW
Frequency - Transition: 125MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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The CMPTA29 is a single bipolar junction transistor (BJT). It is a four-layer device which has both a P-channel and an N-channel layer, which makes it a versatile device for many applications. It is mainly used in switching and voltage regulation applications and is widely used in embedded systems and field-programmable gate arrays (FPGAs).

The CMPTA29 is primarily used in applications requiring high-speed switching and voltage regulation. It is commonly used in embedded systems such as radios, television, and satellite communications, and has been designed to be used in challenging environments where other transistors may not be able to operate. The device has a maximum power dissipation rating of approximately 600 milliwatts and can operate up to 150°C.

The CMPTA29 has an excellent current gain range of 70 to 1100, which makes it a great choice for applications requiring high current gains. It also has a maximum collector-emitter voltage of 30V, which makes it suitable for many applications. The device also has a high breakdown voltage of 30V, which makes it well suited for use in power supply and high voltage applications.

The CMPTA29 also has a very low base current capacitance of 4nA, which helps to reduce instantaneous power demand when the transistor is switched. This helps to reduce power supply noise and improve system efficiency. The device also has a very low collector-emitter saturation voltage of 0.9V, which makes it a great choice for applications that require low voltage operation.

The CMPTA29 also has a very fast switching speed, which makes it suitable for applications that require rapid response times. It can switch from its on state to its off state in less than 2ns, which is faster than many other transistors of comparable size. The device also has a maximum switching time of only 10ns, which makes it a great choice for high frequency applications.

The working principle of the CMPTA29 is similar to that of other transistors. It uses the junction of two different types of semiconductor materials to create “junctions” between the layers. The first junction, or PN junction, is formed when an N-type semiconductor material is placed against a P-type semiconductor material. The resulting junction creates a path for electrons to move between the two layers.

The second junction created is an emitter-base junction, which creates a potential barrier for electrons to pass through. When a voltage is applied to the base (or gate) of the transistor, current is drawn through the emitter and collector. This current gain is determined by the ratio of the current flowing through the collector and the current flowing through the base. The voltage applied to the base of the transistor is called the base voltage and its value determines the current flow.

Depending on the current gain and base voltage, a transistor can operate in one of three different regions. In the active region, the current gain is high and the base voltage is low. In the saturation region, the current gain is also high but the base voltage is also high. Finally, in the cutoff region, the current gain is low and the base voltage is high. Different transistors may also be operated in different regions depending on the application.

The CMPTA29 is an ideal choice for a variety of applications such as switching, voltage regulation, and voltage amplification. Its high current gain and low saturation voltage make it well suited for many embedded systems and FPGAs, while its fast switching times make it ideal for high-frequency applications. With its excellent current gain range and low base current capacitance, the CMPTA29 is an ideal choice for a wide range of applications and environments.

The specific data is subject to PDF, and the above content is for reference

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