CPMF-1200-S080B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CPMF-1200-S080B belongs to the family of transistors, field effect transistors (FETs), and more specifically, single MOSFETs (metal oxide semiconductor field effect transistors). This short yet crucial two-letter acronym, MOSFET, is important to note since it fundamentally affects the operation and design of this part. It must be taken into consideration when assessing the applications and working principles of the CPMF-1200-S080B.

First, let\'s start by examining the applications for the CPMF-1200-S080B. This MOSFET is primarily used in power management, as it is suitable for operation at high input voltages, as well as low and reverse current. Because of its benefits, it is commonly utilized in switchmode power supplies, linear drivers, HVAC systems, cooling systems, and automotive electronics.

The most important feature of the CPMF-1200-S080B is its ability to handle up to a 10 A transient current. Furthermore, because it has a very low input capacitance and gate charge, it does not offer much in terms of power dissipation when in operation. As a result, it is considered to be very reliable and efficient.

Now let us get into the details of the working principle of the CPMF-1200-S080B. Understanding this part starts with knowing the basic principles of FETs, and more specifically MOSFETs. Like all MOSFETs, this part relies on the concept of transistor action, meaning it must first be in conducting state for current to flow.

A Gateway, or Gate, is used to control the drain-source current in the CPMF-1200-S080B. When a sufficient positive or negative voltage is applied to the Gate, it causes the channel between the source and the drain to become conductive, or “turn on.” If a low voltage is applied to the Gate, the channel becomes non-conductive, or “turn off.” In this case, no current can pass through the device.

The CPMF-1200-S080B is designed with a 15 V Gate-Source voltage. This means that the voltage applied between the Gate and the Source must be at least 15 V for the device to turn on. In many cases, manufacturers seek to maximize the drain-source voltage in order to obtain the optimal performance from their devices. The CPMF-1200-S080B is capable of withstanding a maximum drain-source voltage of up to 800 V, making it very reliable in a wide variety of applications.

In summary, the CPMF-1200-S080B is a highly reliable and efficient single MOSFET designed to efficiently manage power. It offers excellent transient tolerance, low gate charge, and can withstand a maximum drain-source voltage of 800 V. The working principle is based on the traditional transistor action, with a Gate controlling the drain-source current.

The specific data is subject to PDF, and the above content is for reference