CPMF-1200-S160B

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CPMF-1200-S160B Application Field and Working Principle

The CPMF-1200-S160B is a single field-effect transistor (FET) that is used in a variety of applications. It is widely used in power supply, radio frequency (RF), and audio applications for its high speed switching, low feedback, and low noise. This FET is designed for surface-mount applications and has been tested and verified by multiple manufacturers.

Overview

The CPMF-1200-S160B is constructed of a single element in an N-channel enhancement-mode FET. The device is composed of a thin film silicon dioxide (SiO2) body, a highly doped N-type semiconductor gate, and a lightly doped P-type semiconductor drain. It is designed for surface-mount applications and has been tested and verified for performance, reliability, and EMI/EMC compliance by multiple manufacturers.

Applications

The CPMF-1200-S160B can be used in a variety of applications requiring low power consumption, low noise, low signal distortion, and high switching speed. It is commonly used in power supply, RF, and audio applications, such as power supply, switching power supplies, and power amplifier stages. Additionally, it is compatible with integrated circuits and can be used in analog and digital circuits.

Advantages

The CPMF-1200-S160B offers a number of advantages for its end users, including:

• Low power consumption
• High switching speed
• Low noise
• Low signal distortion
• Compact size (6mm x 7mm)
• Tested and verified for performance, reliability, and EMI/EMC compliance

Working Principle

Like all other FETs, the CPMF-1200-S160B operates on the principle of a negative resistance behavior between the source and drain. The device acts as a voltage-controlled resistor, with the gate voltage controlling the magnitude of the drain-to-source current (I_DS). When the gate-to-source voltage (V_GS) is larger than the threshold voltage (V_th) of the device, the FET is turned “on” and current is allowed to flow between the source and the drain. When the gate-to-source voltage is lower than the threshold voltage, the FET is “off” and no current flows between the source and the drain.

The CPMF-1200-S160B has two breakdown voltages that must be kept in mind when operating this device. The first is the absolute maximum voltage, which is categorized as the maximum drain-to-source voltage (V_DS) that can be applied with the gate-to-source voltage set to 0V. The second is the gate-to-source voltage (V_GS) that can be applied without breaking down the device.

Conclusion

The CPMF-1200-S160B is a single field-effect transistor that is used in a variety of applications requiring low power consumption, low noise, low signal distortion, and high switching speed. It is used in power supply, radio frequency, and audio applications, as well as integrated circuits and analog/digital circuits. It operates on the principle of the negative resistance behavior between source and drain, and it offers a number of advantages such as low power consumption and high switching speed.

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