CY7S1041G-10ZSXI

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CY7S1041G-10ZSXI is a serial flash memory device engineered to provide the ideal solution for a wide range of system designs. It offers an efficient, low-power solution for code and data storage. This device is categorized as a non-volatile, electrically reprogrammable, floating-gate type of memory. The device is also widely used in industrial and consumer applications.

The CY7S1041G-10ZSXI serial flash memory is used widely in applications such as automotive, industrial, consumer, and communications systems. Its advantages include a low power consumption and fast access times. The device also supports up to 30 MHz operating speeds and up to eight chip select pins. With such performance characteristics, the device is ideal for systems requiring reduced power consumption and improved system performance.

The CY7S1041G-10ZSXI has a single-supply voltage of 1.7 V to 2.7 V. It is much lower than the voltage of common serial flash memories and thus offers improved power efficiency. It also features forty-eight programmable address lines which allows for higher density data storage, and a wide range of data sizes.

CY7S1041G-10ZSXI works on the principle of micro-mimic non-volatile electrons stored on a floating gate, which is electrically reprogrammable. The memory cell contains an array of three-dimensional metallurgical junctions formed by the permanent program layer, the transfer layer, and the tunnelling layer. The electrons are stored onto the floating gate using Fowler-Nordheim tunnelling. The electrons are then trapped by the electric field created by the gate and the two junction layers. The electrons can then be read and written using the source and drain current.

The write operation of the device is performed by applying a high current signal to the source or drain which allows the electrons to tunnel through the tunnelling layer from the tunnel layer to the transfer layer. The electrons will then be permanently stored in the floating gate. The read operation is done by measuring a small current signal running through the source and drain. The voltage of the source and drain is used to determine the amount of electrons stored in the floating gate.

The CY7S1041G-10ZSXI is ideally suited for applications which require a low power, fast access serial flash memory. Its single-supply voltage, wide range of data sizes, and wide programmable address lines makes it perfect for automotive, industrial, consumer, and communication systems. The device is reliable, easy to use and provides superior performance.

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