CY7S1041G30-10ZSXIT

CY7S1041G30-10ZSXIT Memory

CY7S1041G30-10ZSXIT is a High Density Zero Power SRAM (Static Random Access Memory) device produced by Cypress semiconductor. This device is designed for low power consumption, with a power supply voltage between 1.7 and 3.6V depending on speed grade, making it the ideal choice for battery-powered battery-operated products.

Application

CY7S1041G30-10ZSXIT is widely used in memory applications such as Automotive, industrial, gaming machines, medical systems and many other applications where low power consumption and high memory density are essential. This makes it an excellent choice for applications that need fast access to large amounts of data in a very short amount of time.

In particular, it is perfect for applications such as Automotive Body Electronics, Graphics and GPS, Surveillance Camera, Home Automation and Industrial Automation which require high power efficiency. Its low power consumption coupled with high-density make it an excellent choice for Automotive applications like in-vehicle navigation systems and advanced driver assistance systems (ADAS) featuring object and scene recognition.

CY7S1041G30-10ZSXIT is also used in many consumer and medical devices such as heart rate monitors, portable medical devices, or consumer goods like cellphones, tablet PCs and digital audio players due to its low power consumption and excellent performance.

Working Principle

The CY7S1041G30-10ZSXIT is basically a non-volatile memory device, meaning it can store data even when the power is turned off. This low power storage feature is enabled by the use of a Floating Body Cell technology. Inside each cell, the floating body stores the data, and the access transistors enable the data to be read from or written to the memory.

In addition, CY7S1041G30-10ZSXIT uses two different power supply voltages which are referred to as the via voltage and the active voltage. The via voltage is used when the memory device is idle, and the active voltage is used when the memory device is accessed. This dual voltage system efficiently helps reduce power consumption by needing to use only the higher power supply when necessary.

CY7S1041G30-10ZSXIT also features a unique circuitry called I/O Fast Read, which allows it to read data much faster than a conventional SRAM. This feature enhances the speed of data access and reduces power consumption. The CY7S1041G30-10ZSXIT also features a built-in error detection and correction (EDAC) feature, which helps reduce the amount of bit errors that occur when the device is accessed.

Conclusion

CY7S1041G30-10ZSXIT is a versatile memory device with excellent performance, low power consumption and high density. Its ability to store data even when the power is off makes it ideal for battery-powered applications. Its advanced features like I/O Fast Read, Plus Power and EDAC make it perfect for automotive, medical, industrial, and consumer applications.