Allicdata Part #: | CY7S1049G30-10VXI-ND |
Manufacturer Part#: |
CY7S1049G30-10VXI |
Price: | $ 5.94 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4M PARALLEL 36SOIC |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral... |
DataSheet: | CY7S1049G30-10VXI Datasheet/PDF |
Quantity: | 1000 |
95 +: | $ 5.39120 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7S1049G30-10VXI is a wired memory device with a wide range of applications in the industry. It is an integrated, non-volatile memory designed for use in highly reliable, high-performance memory systems. This memory chip is a high-density device which can store up to 32,768 words of data and supports both fast read and write operations.
This device is manufactured with advanced 0.25μm process technology, making it very reliable, with a typical write time of 700ns and a typical erase time of 2.5μs. This device is also designed to consume less power, with a writing current of 10mA and an erase current of 15mA.
CY7S1049G30-10VXI has a loop-type architecture, with an internal data bus which links the memory block and the buffer memory. The memory block is divided into four banks of 256 words each. The data bus inside the device is linked to eight programmable I/O ports, allowing high-speed data transfer over a wider range of speed and data formats. Additionally, it supports two address buses, allowing the device to address up to 32K bytes of address space. While the device is powered, the data is retained in the memory block and the power can be turned off without losing data.
CY7S1049G30-10VXI is also designed to provide superior data integrity and access. It has an error detection and correction (EDC) circuitry, which can detect and correct single bit errors or even multiple bit errors, thus ensuring data accuracy and integrity. The device also provides an auto wear leveling feature to ensure that the data is evenly distributed among the different banks, thus increasing performance and reliability. Moreover, it also offers an auto refresh feature to ensure that the data is refreshed periodically, avoiding data drift and ensuring data accuracy.
CY7S1049G30-10VXI provides a wide range of features and is suitable for applications such as data processing equipment, computer peripherals, embedded systems, automotive electronics, automotive controllers and electronic toys. Its wide range of features, such as high-speed operations, low power consumption, EDC and auto wear leveling, makes it a superior choice for any embedded system or computer-based application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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CY7S1061GE30-10ZXIT | Cypress Semi... | 23.58 $ | 1000 | IC SRAM 16M PARALLEL 48TS... |
CY7S1061G30-10BVXI | Cypress Semi... | 24.93 $ | 1000 | IC SRAM 16M PARALLEL 48VF... |
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CY7S1061G18-15ZSXI | Cypress Semi... | 25.64 $ | 1000 | IC SRAM 16M PARALLEL 54TS... |
CY7S1061G30-10ZSXI | Cypress Semi... | 25.64 $ | 1000 | IC SRAM 16M PARALLEL 54TS... |
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