CY7S1061GE30-10BVXI

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The CY7S1061GE30-10BVXI is the newest addition to Cypress Semiconductor’s family of Serial Flash memory products. It is a high performance Non-Volatile Memory (NVM) that provides a wide range of applications from industrial to consumer markets. This article will discuss the application field and working principle of the CY7S1061GE30-10BVXI.

The CY7S1061GE30-10BVXI comprises a 64 Mbit (8-Megabit) Serial Flash memory array, organized as 4 Mbits × 16 devices. The device is divided into banks of four bits to facilitate efficient memory access. The device is fabricated using Advanced 0.19μm CMOS process technology, and the memory array is organized as a 32 K×256 bit structure. It has an extremely low power consumption at 0.75uW/bit, making it ideal for embedded applications that require low power consumption. The device is well-suited for applications such as automotive control systems, remote sensing, digital audio, gaming devices, and data acquisition systems.

In terms of its working principle, the CY7S1061GE30-10BVXI employs a non-volatile Flash memory technology, where the cells are programmed using Fowler-Nordheim tunneling program techniques. The memory cells used in the device consist of a flash structure, which is made up of a thin oxide gate dielectric, a thin oxide tunnel gun, and a silicide injector region. The program operation is initiated with the application of a voltage to the gate region, which causes the electrons to tunnel from the substrate to the floating gate. This increases the number of electrons in the floating gate, reducing the voltage threshold of the oxidative tunnel gun, thus initiating the programming process.

The device also features multiple read/write operations, including random read, fast random access read, page write, and programmable write. For random reads, the device provides an 8-bit word address, which is translated into a 12-bit device address, allowing reading to start at any location in the memory array. In page write mode, the device allows up to 256 bytes to be written to the same page in a single operation. The programmable write mode enables the writing of multiple bytes at different locations within the same page, thus reducing the time required for programming.

The CY7S1061GE30-10BVXI also supports error correction code (ECC) for data integrity and reliability. The on-chip ECC engine uses a multi-bit, check-and-correct algorithm, which is capable of correcting up to 6-bit errors per byte. The ECC engine automatically recalculates and corrects any errors detected in the memory array, thereby preventing data corruption due to irregularities or faults.

The CY7S1061GE30-10BVXI has a wide operating temperature range from -45°C to +85°C, making it an ideal choice for applications in extreme environmental conditions. The device can also operate at voltages ranging from 2.7V to 3.6V, and supports program and erase operations at the same voltage. The device offers industrial protection during program and erase operations, with an anti-tamper protection for write-level security.

In summary, the CY7S1061GE30-10BVXI is a non-volatile memory product with a wide ranging set of applications. It features a low power consumption, a wide operating temperature range and a range of programmable read and write operations. The device also offers high data integrity and reliability through its on-chip ECC engine. The CY7S1061GE30-10BVXI is an ideal choice for cost-effective, reliable memory solutions in embedded applications.

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