Allicdata Part #: | CY7S1061G30-10BVXIT-ND |
Manufacturer Part#: |
CY7S1061G30-10BVXIT |
Price: | $ 23.58 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 16M PARALLEL 48VFBGA |
More Detail: | SRAM - Synchronous Memory IC 16Mb (1M x 16) Parall... |
DataSheet: | CY7S1061G30-10BVXIT Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 21.43260 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous |
Memory Size: | 16Mb (1M x 16) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-VFBGA (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In a memory system, the CY7S1061G30-10BVXIT is an integrated device which enables high-speed SPI Flash memory to be used in an embedded system. This device is a low-power, 10Mb/s SPI Flash memory device with a memory array density of up to 1 Gb (128 Mbit). The CY7S1061G30-10BVXIT has an operating temperature range of -40°C to +85°C and storage temperature range of -55°C to +135°C.
The CY7S1061G30-10BVXIT has a wide range of applications in embedded system memory applications. This device can be used in a variety of applications such as system BIOS, configuration memory, program memory, data memory, and application-specific memory. It can also be used as a firmware flash memory, or as an EEPROM replacement.
The working principle of the CY7S1061G30-10BVXIT is based on the SPI bus protocol. This protocol uses three-wire serial communication to connect devices on the same bus. The protocol is consists of a clock line, a data input line, and a data output line. The clock line sends a series of pulses with both rising and falling edges, which form a “clock” signal. The data input line is then used to transfer data into the device, while the data output line is used to store data in the device. Optionally, two additional control lines can also be used for control operations.
The CY7S1061G30-10BVXIT also supports a wide range of features such as dual read cycle, self-timed write cycle, power-down mode, and command mode. In the dual read cycle mode, the device can read data in two steps, giving a high throughput. In self-timed write cycle mode, the device can write data without the need for additional control signals. In power-down mode, the device can reduce power consumption during idle periods. And finally, in command mode, the device can perform more powerful operations such as erase and program.
In conclusion, the CY7S1061G30-10BVXIT is a low-power, high-performance SPI Flash memory device which is ideal for embedded memory applications. Its wide range of features and capabilities make it an attractive choice for applications requiring fast, low-power data storage. Its SPI bus protocol provides fast, reliable communication between devices on the same bus and its wide range of features such as dual read cycle, self-timed write cycle, power-down mode, and command mode provide enhanced system-level performance.
The specific data is subject to PDF, and the above content is for reference
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