CY7S1061GE30-10BVXIT

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The CY7S1061GE30-10BVXIT is a high-power, high-bandwidth SyncBurst™ SRAM ideal for a variety of memory applications. This device fits perfectly in applications such as graphics cards, motor control systems, and communication infrastructure. It offers faster throughput, improved power consumption, lower latency, and higher system performance.

The CY7S1061GE30-10BVXIT is a synchronous SRAM, which means that data is accessed on the rising edge of a clock. This type of memory is one of the most widely used, as it allows for faster data transfers due to its synchronous nature. It also allows data to be stored in higher capacities without compromising performance. The device offers a wide range of densities and speeds, letting customers choose the right combination of data rate and capacity for their applications.

The CY7S1061GE30-10BVXIT also contains several features to improve data throughput, improve system power efficiency, and lower latency. The SyncBurst™ feature enables burst operations in multiple processor systems and allows for faster data transfer between processors. It also supports the low power auto-power-down feature, which reduces system power consumption when idle. In addition, write bursts are supported, which eliminates the need for multiple write cycles and reduces latency.

The CY7S1061GE30-10BVXIT also contains a self-timed data bus, which eliminates bus contention and further reduces system latency. It also contains an integral voltage regulator, which helps provide stable system power and clock speeds even in the most demanding applications. The device also contains parity and CRC error detection and correction for improved reliability.

In summary, the CY7S1061GE30-10BVXIT is an ideal device for memory applications, offering a wide range of densities and speeds, improved power efficiency and latency, and improved reliability. The SyncBurst™ feature maximizes performance, while the self-timed bus helps reduce latency. The integral voltage regulator improves system power stability, and the parity and CRC error detection and correction features provide improved reliability. All of these features make the CY7S1061GE30-10BVXIT an ideal choice for memory applications.

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