CY7S1061GE30-10BVM

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CY7S1061GE30-10BVM Application Field and Working Principle

CY7S1061GE30-10BVM is a high-speed 1024-kbit Static Random Access Memory (SRAM) from Cypress Semiconductor. This is an asynchronous SRAM, characterized by its low power consumption, minimal noise, and reliable performance. It is well-suited for various computing and embedded design applications. This article discusses the application fields and working principle of the CY7S1061GE30-10BVM.

Application Fields

The CY7S1061GE30-10BVM is ideal for applications where memory access and speed are of utmost importance. It is used in high-performance embedded systems such as digital signal processors, industrial robotics, medical equipment, telecommunications, test & measurement systems, instrumentation, data processing, gaming consoles, security systems, and portable electronic devices. These memory chips are well-suited for applications with space constraints and energy optimization requirements.

Working Principle

The CY7S1061GE30-10BVM is an asynchronous SRAM. It is designed with a self-timing architecture that allows it to operate at lightning-fast speeds. This SRAM contains 1024 address locations with each location being 8 bits wide. The chip is organized as 8 data banks containing 128 locations each. It uses a three-waveaddress multiplexing scheme, reducing address time. The chipAsynchronous SRAMs have an internal clock that runs at a fixed frequency. This maintains the logic states and passes data bytes through the device in a repetitive manner.

The CY7S1061GE30-10BVM has a single chip enable input, allowing for a zero-wait state operation. It also contains two Chip Select pins for greater control over bank selections. This chip also contains a Power Save Mode that reduces the active power consumption of the device, making it particularly suitable for low-energy solutions. The CY7S1061GE30-10BVM supports both synchronous and asynchronous read and write operations.

The CY7S1061GE30-10BVM is fast and stable. It has an access time of 145 ns (maximum) and a data access time of 131 ns (maximum). The chip also features multiple page read and page write modes that increase throughput while reducing power consumption. The CY7S1061GE30-10BVM has an extended frequency range of 10 MHz to 75 MHz, supporting high data rates.

Conclusion

The CY7S1061GE30-10BVM is a high-speed 1024-kbit asynchronous Static Random Access Memory (SRAM). It is used in a variety of embedded systems, medical and security equipment, instrumentation, and portable electronic devices. It operates at lightning-fast speeds, with a maximum access time of 145 ns and data access time of 131 ns. The ability to maintain logic and pass data through the device in a repetitive manner allows for fast and reliable operation. The CY7S1061GE30-10BVM also supports multiple page read and write operations, increasing throughput and reducing power consumption.

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