
Allicdata Part #: | CYD02S36VA-167BBXC-ND |
Manufacturer Part#: |
CYD02S36VA-167BBXC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 2M PARALLEL 256FBGA |
More Detail: | SRAM - Dual Port, Synchronous Memory IC 2Mb (64K x... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Synchronous |
Memory Size: | 2Mb (64K x 36) |
Clock Frequency: | 167MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 4.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 256-LBGA |
Supplier Device Package: | 256-FBGA (17x17) |
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CYD02S36VA-167BBXC is a memory device that can be used in a variety of applications. It is a field-programmable memory device, meaning that it can be reconfigured to suit the user\'s needs, and hence has a wide range of uses. This article will discuss the application field and working principle behind the CYD02S36VA-167BBXC memory device.
Application Field
The CYD02S36VA-167BBXC memory device can be used in a variety of different applications. For example, it can be used in automotive, industrial, medical, telecommunications, and consumer electronics applications. It is also suitable for use in memory-intensive tasks, such as audio and video processing, image processing, and embedded systems. Furthermore, it is capable of near-instantaneous reconfiguration, so it is also ideal for use in applications that require dynamic reconfiguration, such as communications and military applications.
Working Principle
The working principle behind the CYD02S36VA-167BBXC memory device is relatively simple. It is essentially a field-programmable memory device, meaning that it can be programmed by the user. This is done by connecting the device to the motherboard, and then writing data to the device. This data can then be used to control the device\'s behavior.
The CYD02S36VA-167BBXC memory device is based on the non-volatile non-volatile Flash memory principle, which means that the data stored in it is not lost when power is interrupted. Furthermore, the memory can be configured as a "data flash" or a "code flash," depending on the application. In either case, data can be written to and read from the device quickly and easily.
In addition to its field-programmable capabilities, the CYD02S36VA-167BBXC memory device also offers a few other advantages. For example, it is designed to be temperature-resistant and has a very low standby current. Furthermore, it has a high write endurance, meaning that it can withstand multiple writes without degrading its performance.
Conclusion
In conclusion, the CYD02S36VA-167BBXC memory device is a versatile memory device with a wide range of applications. It is a field-programmable device that can be programmed to suit the user\'s needs, and is suitable for use in memory-intensive tasks. Furthermore, it has a very low standby current and is temperature-resistant, making it ideal for a variety of applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
CYD02S36VA-167BBC | Cypress Semi... | -- | 90 | IC SRAM 2M PARALLEL 256FB... |
CYD09S36V18-WW14 | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9MBIT 256FBGAMemo... |
CYD02S36V18-200BBXC | Cypress Semi... | -- | 1000 | IC SRAM 2M PARALLEL 256FB... |
CYD09S72V-167BBC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 484FB... |
CYD09S72V18-167BBXC | Cypress Semi... | -- | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD09S18V18-167BBXC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD02S36VA-167BBXC | Cypress Semi... | -- | 1000 | IC SRAM 2M PARALLEL 256FB... |
CYD09S72V18-200BBXC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD09S72V18-250BBXC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD09S72V-133BBC | Cypress Semi... | -- | 1000 | IC SRAM 9M PARALLEL 484FB... |
CYD02S36V18-167BBC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 256FB... |
CYD09S18V18-167BBXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD02S36V-167BBXC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 256FB... |
CYD09S72V18-200BBXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD04S18V-167BBC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 4.5M PARALLEL 256... |
CYD02S36V-167BBC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 256FB... |
CYD04S72V-133BBC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 484FB... |
CYD09S36V18-200BBXC | Cypress Semi... | 118.99 $ | 7 | IC SRAM 9M PARALLEL 256FB... |
CYD04S72V-167BBC | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 484FB... |
CYD09S18V18-200BBXC | Cypress Semi... | -- | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD09S72V18-167BBXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 256FB... |
CYD09S36V18-200BBXI | Cypress Semi... | -- | 80 | IC SRAM 9M PARALLEL 256FB... |
CYD04S72V-133BBI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 484FB... |
CYD09S72V18-200BGXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 9M PARALLEL 484FB... |
CYD09S72V-133BBI | Cypress Semi... | -- | 1000 | IC SRAM 9M PARALLEL 484FB... |
CYD09S36V18-167BBXC | Cypress Semi... | -- | 90 | IC SRAM 9M PARALLEL 256FB... |
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