CYD09S18V18-167BBXI Allicdata Electronics
Allicdata Part #:

CYD09S18V18-167BBXI-ND

Manufacturer Part#:

CYD09S18V18-167BBXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 9M PARALLEL 256FBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 9Mb (512K ...
DataSheet: CYD09S18V18-167BBXI datasheetCYD09S18V18-167BBXI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CYD09S18
Supplier Device Package: 256-FBGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 4ns
Series: --
Clock Frequency: 167MHz
Memory Size: 9Mb (512K x 18)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory: CYD09S18V18-167BBXI Application Field and Working Principle

The CYD09S18V18-167BBXI is a dynamic random access memory (DRAM) device. It is based on NAND (Negative And) technology, and is the latest DRAM type used in the market.

In terms of application fields, the CYD09S18V18-167BBXI is a reliable and stable memory solution for data intensive applications such as cloud computing, analytics, and memory-intensive databases. It offers high performance and scalability, making it suitable for extreme workloads. It is also used in graphics processing and artificial intelligence, as well as in high-end embedded system applications.

In terms of working principles, the device is composed of three basic elements: the array, the controller, and the diodes. The array is the core of the device, and the controller is responsible for relaying the data to the array for storage. The diodes control the access to memory, allowing for quick access to stored data.

The array is composed of rows and columns, where the rows are organized in a linear array format, and the columns are organized in a random arrangement. As the memory is read and written to, the different components of the device work together in synchronous operations.

The controller part of the device is connected to the array and is responsible for the transfer of data. It handles read and write operations, as well as managing when and where data is written to or read from. It also maintains the queue on which the data is written and read.

Finally, the diodes control access to the memory. The diodes restrict the data written to the memory to the specific locations, so that the data can only be accessed from those locations. This prevents data from being overwritten by other data and gives the memory its non-volatility property.

The CYD09S18V18-167BBXI is an efficient and reliable device, and is suitable for a wide range of applications. Its array structure and efficient design make it a great choice for heavy read and write operations, high-end analytics, and cloud computing. Its non-volatility and quick access times also make it ideal for embedded systems, graphics processing, and artificial intelligence.

The specific data is subject to PDF, and the above content is for reference

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