CYD09S36V18-200BBXC Allicdata Electronics
Allicdata Part #:

428-2035-ND

Manufacturer Part#:

CYD09S36V18-200BBXC

Price: $ 118.99
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 9M PARALLEL 256FBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 9Mb (256K ...
DataSheet: CYD09S36V18-200BBXC datasheetCYD09S36V18-200BBXC Datasheet/PDF
Quantity: 7
1 +: $ 118.99000
10 +: $ 115.42000
100 +: $ 113.04000
1000 +: $ 110.66100
10000 +: $ 107.09100
Stock 7Can Ship Immediately
$ 118.99
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CYD09S36
Supplier Device Package: 256-FBGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 3.3ns
Series: --
Clock Frequency: 200MHz
Memory Size: 9Mb (256K x 36)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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The CYD09S36V18-200BBXC is a type of dynamic random access memory (DRAM) chip. It is used for storing digital data in a computer for short-term use. DRAM chips are made up of an array of capacitors, which are used to store each bit of data. The capacitors are charged and discharged during data storage, and the charge and discharge cycle must be maintained to keep the data stored properly. DRAM chips are the main source of RAM in most computers today and are commonly used in laptops, desktops, and many other computers.

The CYD09S36V18-200BBXC is typically used as a main memory in computers. It is a high-speed and high-density memory that can store up to 200 megabytes of data. The chip is manufactured using a 0.18um double-level metallization process, which gives it the ability to operate at up to 400MHz. This chip also has a low power consumption of only 2.6 watts and an integrated on-die temperature sensor.

The CYD09S36V18-200BBXC has a unique design that allows it to offer high-speed performance even at low power consumption levels. It uses what is called a pseudostatic RAM (PSRAM) architecture, which is a type of dynamic random-access memory (DRAM) that is designed to operate at high speeds and consume less power. The PSRAM architecture consists of several layers of transistors, capacitors, and resistors. The layers are arranged in such a way that when one layer is charged, the other layers are also charged, allowing for quick access to the data stored on the chip.

As with other DRAMs, the CYD09S36V18-200BBXC operates with a refresh cycle. This refresh cycle stores the charge of each bit in the memory, ensuring that the data remains accurate. The refresh cycle is also used to detect and correct any errors that may have been caused by interference or other external factors. If an error is detected, the data is corrected and any affected bits are recharged. This helps to keep the data stored in the memory accurate.

Overall, the CYD09S36V18-200BBXC is a powerful and reliable memory chip that provides high-speed performance with low power consumption. It is a great choice for many modern applications, especially those that require large amounts of data storage.

The specific data is subject to PDF, and the above content is for reference

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