CYD09S72V18-167BBXC Allicdata Electronics
Allicdata Part #:

CYD09S72V18-167BBXC-ND

Manufacturer Part#:

CYD09S72V18-167BBXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 9M PARALLEL 256FBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 9Mb (128K ...
DataSheet: CYD09S72V18-167BBXC datasheetCYD09S72V18-167BBXC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CYD09S72
Supplier Device Package: 256-FBGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 4ns
Series: --
Clock Frequency: 167MHz
Memory Size: 9Mb (128K x 72)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory is the basis of modern computer system. Understanding the application field and working principle of the CYD09S72V18-167BBXC is essential to optimizing computer performance. This memory type is extremely fast and efficient in addressing data quickly.

CYD09S72V18-167BBXC has been designed for an application field that requires fast operation and high data density. It is a multi-layer memory module perfect for workstations, servers, and other devices and platforms that require large memory capacity and fast processing power. The memory type supports a wide range of operating systems, allowing for easy integration into existing system architecture allowing for consistent functioning.

The working principle of CYD09S72V18-167BBXC is based on double data rate a synchronous dynamic random access memory. Each commonly available unit has an integrated circuits that includes multiple memory space chips in an 8-bit configuration. The unique feature of CYD09S72V18-167BBXC is its ability to address and quickly store data directly in the memory buffer. This minimizes the amount of time spent loading data and saving energy in the process.

By combining signal-level sensing, address decoding and control signal generation, CYD09S72V18-167BBXC is able to perform high-speed memory operation. Since they are optimized for random access with highly dense designs, the data transfer rate is enabled which allows large amounts of information to be quickly accessed.

The first phase of the operation is a signal phase which is detected by a data strobe. The signal is then decoded and the CYD09S72V18-167BBXC can begin to process the data. During this phase the data is compared to the previous data block in order to ensure accuracy of the incoming data. The following phase is the write phase where the new data is written to the memory location. The memory controller is then used to address and verify that the data has been correctly stored.

The CYD09S72V18-167BBXC memory module is designed for systems that require high-density memory. It is reliable, fast and has a large capacity. Its ability to quickly store and access data makes it perfect for workstations and servers. Further, its advanced control logic makes it an ideal memory type for any application field requiring a high-performing system.

The specific data is subject to PDF, and the above content is for reference

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