CYD09S72V18-200BGXI

Write Cycle Time - Word, Page:	--
Base Part Number:	CYD09S72
Supplier Device Package:	484-FBGA (23x23)
Package / Case:	484-FBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	3.3ns
Series:	--
Clock Frequency:	200MHz
Memory Size:	9Mb (128K x 72)
Technology:	SRAM - Dual Port, Synchronous
Memory Format:	SRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction

CYD09S72V18-200BGXI is a memory product developed by CYDS. It is a high performance and cost-effective embedded NAND Flash. This memory is designed to meet the needs of the embedded market and offers customers a reliable choice of embedded solutions.

Applications

CYD09S72V18-200BGXI is commonly used in embedded applications, including consumer products and industrial control systems. It offers reliable write endurance, improve data retention and high speed performance, making it suitable for a wide range of consumer products.For consumer products, CYD09S72V18-200BGXI can offer up to 200GB of storage, allowing users to store large amounts of data with ease. It also provides fast linear and random read and write speeds, reducing latency and improving user experience. In addition, it is equipped with ECC error correction technology, which can effectively protect the data in storage and raise the storage reliability.For industrial applications, CYD09S72V18-200BGXI provides reliable read and write endurance, increasing the stability and reliability of the system. With its high-speed read and write performance, CYD09S72V18-200BGXI is able to respond to requests quickly, providing a better usage experience. Furthermore, its ECC error correction technology ensures the data is protected, making it ideal for tasks that require data security.

Working Principle

The CYD09S72V18-200BGXI embedded NAND Flash memory utilizes NAND-gate technology to provide customers with reliable data storage solutions. NAND technology uses a network of logic gates connected in series to store data, which can be read and written by applying different voltage levels to the gate inputs. CYD09S72V18-200BGXI also utilizes internal programming algorithms to ensure high read and write performance and increased data reliability.When writing data to the CYD09S72V18-200BGXI, an internal programming algorithm decides the order in which the data is stored. The algorithm divides the data into blocks and pages, which can be read and written more efficiently. Once the data is stored, the ECC algorithm checks for possible errors and corrects them if necessary. The end result is a reliable storage solution that can provide high performance and long-term data protection.

Conclusion

CYD09S72V18-200BGXI is a reliable and cost-effective embedded NAND Flash memory, providing users with a reliable choice of embedded solutions. It is commonly used in embedded applications, such as consumer products and industrial control systems, due to its high capacity, read and write performance, and error correction capabilities. CYD09S72V18-200BGXI utilizes NAND-gate technology and internal programming algorithms to ensure reliable data storage, high read and write performance, and data protection. Thus, CYD09S72V18-200BGXI is an ideal choice for embedded applications that require data security and a high level of performance.

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