CYD09S72V18-250BBXC Allicdata Electronics
Allicdata Part #:

CYD09S72V18-250BBXC-ND

Manufacturer Part#:

CYD09S72V18-250BBXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 9M PARALLEL 256FBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 9Mb (128K ...
DataSheet: CYD09S72V18-250BBXC datasheetCYD09S72V18-250BBXC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CYD09S72
Supplier Device Package: 256-FBGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 2.64ns
Series: --
Clock Frequency: 250MHz
Memory Size: 9Mb (128K x 72)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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The CYD09S72V18-250BBXC is a type of memory device. It is used in a wide range of applications, including data storage, data transfer, and digital signal processing (DSP). It is a fast, reliable, and cost-effective solution for modern memory applications.

The CYD09S72V18-250BBXC is a semiconductor memory device, which means that it stores data using the properties of electrons. This type of memory is composed of two types of transistors: static random access memory (SRAM) and dynamic random access memory (DRAM). The combination of both types of transistors allows the device to store large amounts of data in a very small area.

The CYD09S72V18-250BBXC is designed to be used in applications where high speed and low power consumption are necessary. The device has an integrated voltage regulator that ensures the correct level of voltage is applied to the memory chips, even when the power load changes. This allows the device to be used in a variety of applications, from consumer electronics to industrial applications.

The working principle of the CYD09S72V18-250BBXC is based on the storage and manipulation of electrons. This type of memory is divided into two sections: static random access memory (SRAM), and dynamic random access memory (DRAM). SRAM is used for storing data as bits, while DRAM is used for storing data as bytes. The device stores data by utilizing the electrons’ charge to alter the direction of a current that passes through the chip. When the current is reversed, a bit is stored in the memory. This process is repeated multiple times, allowing the user to store more data in a smaller area.

The CYD09S72V18-250BBXC can be used in a variety of memory applications. It is used in industrial and consumer electronics, such as manufacturing and data processing systems, as well as in embedded systems and other applications. The device can also be used as a cache in high-end servers, as well as in computer systems, video game consoles, and more. It is also used in medical imaging and other medical applications where speed and accuracy are needed. The device is highly reliable and can operate at high speeds, making it a great solution for modern memory applications.

The CYD09S72V18-250BBXC is a fast, reliable, and cost-effective solution for modern memory applications. It can provide a high level of performance, and it is designed to be used in a variety of applications. The device can be used for data storage, data transfer, and digital signal processing (DSP). It is also highly reliable, making it a great solution for modern memory applications.

The specific data is subject to PDF, and the above content is for reference

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