DDC114EU-7 Allicdata Electronics
Allicdata Part #:

DDC114EUDITR-ND

Manufacturer Part#:

DDC114EU-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN PREBIAS 0.2W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: DDC114EU-7 datasheetDDC114EU-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: DDC114
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The DDC114EU-7 is an array of pre-biased, uni-directional bipolar transistors, typically found in modern electronics. Its compact size makes it ideal for applications where space is limited, such as cell phones, digital cameras, and other portable electronics. The device is manufactured using advanced semiconductor technology to ensure consistent performance and reliability.

The DDC114EU-7 can be used in many different applications, such as switching, amplification, rectification, and voltage amplification. In addition, it can be used to construct a voltage regulator or power amplifier. The device is capable of utilizing both junction temperature and emitter current to regulate the operating temperature and prevent thermal runaway.

The DDC114EU-7 features two different types of transistors: an NPN and PNP transistor array. The PNP array consists of two high-current, low-power PNP transistors and a low-current, high-power NPN transistor array. The NPN array is made up of two low-current, high-power NPN transistors and one high-current, low-power PNP transistor. By combining both types of transistors, the device can provide the best of both worlds in terms of switching performance and power efficiency.

The working principle of the DDC114EU-7 is relatively simple. It uses transistor biasing to adjust the operating current and voltage of the device. This can be done via a bias network that consists of resistors and capacitors connected in parallel or series. The bias network allows the user to regulate the operating temperature, voltage, and power of the device. Additionally, the bias network can be used to protect the device from overheating and make it more efficient. The bias network also provides improved reliability and higher levels of efficiency.

Another feature of the DDC114EU-7 is its low thermal resistance. This provides better efficiency and minimizes device heating, which makes it ideal for applications that require high switching speeds. The device’s low thermal resistance also helps to ensure better reliability. Additionally, the device is designed to operate over a wide range of temperatures.

The DDC114EU-7 is an ideal solution for a wide range of electronic applications, particularly those that benefit from its compact size and low thermal resistance. Its advanced semiconductor technology ensures reliable performance and makes it an effective solution for regulating operating temperatures, voltages, and power in a wide range of applications. As a result, the device is suitable for use in a variety of situations.

The specific data is subject to PDF, and the above content is for reference

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