Allicdata Part #: | DDC114YH-7DITR-ND |
Manufacturer Part#: |
DDC114YH-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN PREBIAS 0.15W SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | DDC114YH-7 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 10mA, 5V |
Base Part Number: | DDC114 |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDC114YH-7 is a pre-biased array transistor from Texas Instruments. It is a bipolar junction transistor (BJT) specifically designed for RF applications, combining auto-zero and chopper techniques that provide excellent performance in a wide range of applications. This package contains seven transistors on a single chip, allowing it to be used in multiple stages of single-ended amplification or as an array to achieve higher gain, dynamic range, and frequency. In this article, we will take a look at the application fields and working principle of the DDC114YH-7.
As a bipolar junction transistor (BJT), the DDC114YH-7 can be used in numerous applications involving the amplification of small-signal voltages. It is most suited for use in power management systems, ranging from low power (1MHz) to high power (>400MHz). In high power applications, the DDC114YH-7 can be used for RF power amplifiers, efficient power amplifiers, video amplifier, and other amplifiers that require high gain, high efficiency, and high linearity. Due to its broad frequency range, it is well suited for use in low-noise input/output stages for ultrasound, imaging, and other advanced communications.
In addition to amplification, the DDC114YH-7 can also be used in oscillator, frequency conversion, and mixer circuits. This is due to its wide dimensional range and its excellent linearity, which allows the transistor to accurately track the signal’s input frequencies. Furthermore, due to its embedded chopper techniques, the DDC114YH-7 is immune to frequency-dependent phase shifts and has very low noise and distortion levels.
The working principle of the DDC114YH-7 is based on a combination of auto-zero and chopper techniques. The former increases the device’s linearity and gain by using feedback signals from the device itself, while the latter reduces noise by changing the time window for signal input and output. The auto-zero technique also allows the transistor to be temperature compensated, ensuring stable performance even in extreme temperature conditions. The embedded chopper technique ensures that the transistor maintains high linearity and noise immunity without the need for external components. The combination of these two techniques allows the DDC114YH-7 to possess excellent performance with minimal external components.
In conclusion, the DDC114YH-7 is a bipolar junction transistor (BJT) specifically designed for RF applications. It is well suited for use in power management systems, RF power amplifiers, amplifier stages, oscillator, frequency conversion, and mixers due to its wide frequency range and embedded chopper techniques. It combines auto-zero and chopper techniques to provide excellent performance in a wide range of applications while requiring minimal external components.
The specific data is subject to PDF, and the above content is for reference
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