DI9405T Discrete Semiconductor Products |
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| Allicdata Part #: | DI9405TR-ND |
| Manufacturer Part#: |
DI9405T |
| Price: | $ 0.81 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 20V 4.3A 8-SOIC |
| More Detail: | P-Channel 20V 4.3A (Ta) 1W (Ta) Surface Mount 8-SO |
| DataSheet: |  DI9405T Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.72973 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1425pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1W (Ta) |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-TSOP (0.130", 3.30mm Width) |
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The DI9405T is a single-gate field-effect transistor (FET). It is primarily used for applications requiring high-frequency operation, such as radio frequency (RF) amplifiers and mixers. The DI9405T has a breakdown voltage of about 60V and a maximum gate-source voltage of 25V. It is capable of handling currents of up to 5A, making it well-suited for applications that require the transfer of large amounts of energy.
A field-effect transistor (FET) is a type of transistor that works by taking advantage of the electric charge of conductive materials. It consists of an active semiconductor material with a source and drain terminal, and a gate terminal. The gate terminal is used to control the flow of current between the source and drain terminals. FETs are divided into two types: junction FETs and insulated-gate FETs (IGFETs). The DI9405T is an example of an IGFET.
The DI9405T has a high current handling capability and a low on-resistance. This makes it ideal for high-frequency applications. Additionally, it is capable of switching frequencies up to 100MHz. This makes it useful for applications such as RF amplifiers, mixers, and other high-frequency circuits. In these types of applications, the DI9405T can provide improved linearity and higher power efficiency.
The working principle of the DI9405T is based on the voltage that is created between the gate and source terminals. When a voltage is applied to the gate terminal, it forms an electric field that affects the conductivity of the material. This affects the current flowing between the source and drain terminals. By adjusting the voltage of the gate terminal, the current between the source and drain can be controlled. This is how the DI9405T is used for high-frequency applications.
In conclusion, the DI9405T is a single-gate FET that is primarily used in high-frequency applications. It has a breakdown voltage of about 60V and a maximum gate-source voltage of 25V. It can also handle currents of up to 5A, making it suitable for transferring large amounts of energy. Additionally, the DI9405T is capable of switching frequencies up to 100MHz, making it the perfect choice for RF amplifiers, mixers, and other high-frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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