DI9435T Discrete Semiconductor Products |
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| Allicdata Part #: | DI9435CT-ND |
| Manufacturer Part#: |
DI9435T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 30V 5.3A 8-SOP |
| More Detail: | P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
| DataSheet: |  DI9435T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Cut Tape (CT) |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2.5W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-TSOP (0.130", 3.30mm Width) |
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DI9435T is a single N channel field effect transistor (FET) developed by Toshiba, a Japanese electronics and power management company. It is a key component in low-power applications. With a maximum drain current (I D ) of 230mA and drain-source voltage (V DSS ) of 40V, DI 9435T offers an efficient way to amplify signals and control power in these applications.
Typical Applications of DI 9435T
The low on-state resistance (R DS (on) ) of DI 9435 makes it suitable for high-frequency switching applications such as Class D audio amplifiers and motor drive circuits. Furthermore, its 175mΩ R DS (on) at 4.5V makes it excellent for amplifying very low signals in low-voltage applications such as portable radios and portable electronic devices. These numerous features also make DI9435T an excellent choice for all battery-powered devices, such as laptops, digital cameras and mobile phones.
In addition, the DI 9435T is also suitable for applications in which fast switching speed is essential, such as analog and digital multiplexers and monostable or bistable latch circuits.
Working Principle of DI 9435T
The working principle of DI 9435T can be explained by looking at the electrical characteristics of its source and drain. The source is connected directly to the substrate, and acts as the main electrode for controlling the source-to-drain current flow. The drain is connected directly to the gate, and acts as a second main electrode for controlling both the on-state and off-state of the device by modulating the gate-to-source voltage (V GS ).
DI 9435T is an enhancement-mode FET, which means that the drain-source current only flows when the gate-source voltage is greater than V TH (threshold voltage). When negative voltage is applied to the gate, the channel would be pinched-off, blocking the current flow. When the gate-source voltage is increased above V TH , the channel opens and the current starts flowing again.
It also features very high current gain, meaning that it can efficiently and reliably amplify signals and drive heavier loads than is otherwise possible. This makes DI 9435T an ideal choice for signal amplification and current control in a wide range of applications.
Conclusion
DI 9435T is a single N channel field effect transistor that is suitable for a wide range of applications. Its low on-state resistance and wide voltage range make it suitable for both low-voltage and high-frequency applications. Moreover, its enhancement-mode feature and high current gain make it an excellent choice for signal amplification and current control. All these features make DI 9435T an ideal choice for consumers and engineers looking for a reliable and efficient solution for their applications.
The specific data is subject to PDF, and the above content is for reference
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