| Allicdata Part #: | DKI10299TR-ND |
| Manufacturer Part#: |
DKI10299 |
| Price: | $ 0.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | MOSFET N-CH 100V 28A TO-252 |
| More Detail: | N-Channel 100V 28A (Tc) 47W (Tc) Surface Mount TO-... |
| DataSheet: |  DKI10299 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.20721 |
| Vgs(th) (Max) @ Id: | 2.5V @ 650µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 47W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2540pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 35.8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 14.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DKI10299 is an enhancement mode MOSFET which falls under the category of Single FETs and MOSFETs. It is designed to be used as an analog switch, and it performs well as an amplifier, an oscillator, or as an amplifier with a fast response time. It is capable of switching between two states, either on and off. This FET can be used for a variety of applications, such as digital logic, amplifier, signal switching, temperature control, and the like.
The DKI10299 has a wide range of operational frequencies, which makes it a reliable and versatile option for different applications. The structure of the DKI10299 consists of a single and independent gate electrode, a source electrode, and a drain electrode. The thickness of the gate oxide layer determines the threshold voltage at which the FET will start to conduct. The threshold voltage of the DKI10299 is 0.5V.
The working principle of the DKI10299 is based on the generation of a conductive channel between its source and drain electrodes. When a positive voltage is applied to the gate electrode, the electrons become energetic and create a low-resistance drift path. Electrons are then able to move easily in the semiconductor material due to their mobility. This allows the electrons to flow freely from the source to the drain.
The advantages of using the DKI10299 for analog switching applications include its very low static power dissipation, as well as its low gate leakage current. Its wide dynamic range also allows it to operate at various frequencies. This FET also has a high switching speed. Its fast response time makes it suitable for a variety of types of applications, such as motor switching and actuator control.
The DKI10299 is an excellent choice for digital logic applications due to its low switching threshold and low capacitance compared to other MOSFETs. This makes it suitable for signal conditioning and signal processing, or any other type of digital application. Its low power consumption also makes it useful in low-power applications.
The DKI10299 MOSFET is a versatile and reliable FET that can be used in a variety of electronic applications. Its low power consumption, low capacitance, fast response time and high dynamic range make it an ideal choice for analog switch applications and digital logic applications. This FET can be used to switch and amplify digital signals with ease, and its working principle is based on the generation of a conductive channel within the semiconductor material.
The specific data is subject to PDF, and the above content is for reference
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...