Allicdata Part #: | DKI10526TR-ND |
Manufacturer Part#: |
DKI10526 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 100V 19A TO-252 |
More Detail: | N-Channel 100V 19A (Ta) 37W (Tc) Surface Mount TO-... |
DataSheet: | DKI10526 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.16011 |
Vgs(th) (Max) @ Id: | 2.5V @ 350µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1530pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 47.7 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A field effect transistor (FET) is an active electronic device which exploits the special properties of semiconductor materials to control and amplify electrical current. In particular, field effect transistors rely on the physical movement of charge carriers, or "carriers", within a semiconductor in response to an external electric field. The DKI10526 is one such device. This article provides an overview of the operating principle, application fields, and characteristics of the DKI10526 FET.
Introduction to the DKI10526
The DKI10526 is a single gate field effect transistor (FET) manufactured by Diodes Incorporated. It is designed for use in applications requiring high voltage, low power consumption, and solid state reliability. It is an enhancement mode device, meaning that it can be used to switch current either on or off with a voltage control signal.
The DKI10526 is an N-channel device, meaning that it has an N-type material as its gate near the source and drain. This allows the device to conduct current in one direction, while blocking it in the other. The added benefit of this design is that it is ideal for digital logic circuits, since current can be easily switched with a gate input.
Operating Principle
The DKI10526 operates using the field-effect principle. This is a phenomenon which occurs in a metal-oxide semiconductor (MOS) structure, where an electric field applied between the source and drain terminals causes a thin layer of mobile charge carriers to accumulate at the metal-oxide interface. This accumulation of charge creates an additional electric field, which in turn affects the current flow through the device.
The DKI10526 is an enhancement mode device, meaning that it does not conduct current until a voltage level known as the “threshold voltage” is reached. When the gate voltage increases beyond this threshold, the device begins to conduct, allowing current to flow between the source and drain terminals. By adjusting the gate voltage with an external control signal, the device can be used to accurately control the current flow.
Application Fields
The DKI10526 has a number of potential applications, such as:
- Switching and motor control circuits
- RF amplifiers and transmitters
- Audio power amplifiers
- Power converters
- Regulators
- DC to DC converters
- DC/AC inverters
- Telecommunication equipments
The device is also suitable for use in automotive, aerospace, and other industries where a rugged and reliable solution is needed.
Characteristics
The DKI10526 has a number of characteristics which make it an effective solution for many applications. The device offers low on-state resistance, fast switching speed, and low noise. It is also capable of operating at a high voltage level (up to 100V), making it suitable for high voltage applications. Finally, the device has an average thermal resistance of 1.5°C/W, meaning that it can dissipate heat effectively.
The DKI10526 is also fairly robust and reliable, with an operating temperature range of -55°C to +150°C. This makes it suitable for use in harsher environments, and is a major factor in its durability. Additionally, the device has a package size of 4.5mm x 7.5mm, which makes it easy to integrate into circuit boards.
Conclusion
The DKI10526 is a single gate field effect transistor (FET) manufactured by Diodes Incorporated. It is an enhancement mode N-channel device designed for use in applications requiring high voltage, low power consumption, and solid state reliability. The device operates using the field-effect principle, and has a number of potential applications including switching and motor control circuits, RF amplifiers and transmitters, audio power amplifiers, and more. The DKI10526 is also noted for its robustness, as it is capable of operating at a high voltage level, has an operating temperature range of -55°C to +150°C, and has an average thermal resistance of 1.5°C/W. Overall, the DKI10526 is an effective and reliable solution for many applications.
The specific data is subject to PDF, and the above content is for reference
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...