DMG8880LK3-13 Discrete Semiconductor Products

The DMG8880LK3-13 is a 40V single-channel N-Channel enhancement-mode power MOSFET that is fully specified for automotive applications. It is built with a new planar stripe MOSFET process wherein an improved silicon-feather technol-ogy is used that provides remarkable performance. This device has an extremely low RDS(ON) of only 3mΩ at 10V.

The DMG8880LK3-13 is designed primarily for use in high efficiency power management circuits with minimum component count and in lighting or LED applications. It’s features include low gatesource threshold voltage, high transconductance and fast switching speeds. It is also suitable for a wide range of applications, such as DC-DC converters, motor drives and smart power switching.

Working Principle

The workings of the DMG8880LK3-13 center around its N-Channel enhancement-mode technology. This type of MOSFET transistors works by having a gate, a source, and a drain terminal. By having a voltage difference between the gate and the source, a new type of induced electric field is created. This field modifies the properties of the silicon and changes how the electrons are able to move through it. The result is that the electrons in the channel experience a force, otherwise known as a “drift current”, that pushes them towards the drain end. This allows for conduction to occur between the source and the drain, and the transistor works.

The DMG8880LK3-13 also features low on-state resistance and high transconductance. This means that the transistor will be able to deliver power to its load with minimal losses. This is useful in applications such as motor drives, smart power switching and DC-DC converters. It makes the MOSFET transistor a superb choice for high efficiency and low temperature operation.

The DMG8880LK3-13 has a number of features that makes it ideal for use in automotive applications. It is able to operate at temperatures ranging from -55C to 150C, and it has an ultra-low R on-state resistance. This helps to ensure that vehicle performance is maintained even in the most extreme conditions. The MOSFET also has an integrated ESD protection feature that helps to protect against electrostatic discharge.

Applications

The DMG8880LK3-13 can be used for a variety of automotive and industrial applications. It is ideal for DC-DC converters and motor drives, as well as other high efficiency switching applications. It is also suitable for power management circuits with minimal component count and lighting or LED implementations. The features provided by the MOSFET, such as its low gate-source threshold voltage, high transconductance and fast switching speeds, make it a great choice for these types of applications.

The DMG8880LK3-13 is also an effective solution for smart power switches and automotive body controllers. It can be used to reduce power consumption, improve system efficiency and reduce overall heat dissipation. In addition, the low static drain-source on-state resistance and high transconductance of the device make it well suited for use in high-temperature thermal management applications.

The DMG8880LK3-13 is also suitable for LED lighting applications, as it has excellent on-state performance and a low gate threshold voltage. It is able to handle high currents with a high efficiency and minimal losses, making it an ideal choice for LED lighting implementations.

In conclusion, the DMG8880LK3-13 is a great choice for automotive and industrial applications. It has low static drain-source on-state resistance, high transconductance and fast switching speeds, allowing it to handle everything from DC-DC converters to LED lighting applications. Additionally, its integrated ESD protection feature makes it an ideal choice for use in harsh environments. Therefore, the DMG8880LK3-13 is a versatile transistor that manufacturers and engineers can confidently rely on for their projects.